화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Materials Research, Vol.20, No.11, 606-610, November, 2010
DOI10.3740/MRSK.2010.20.11.606  Export Citation
RF 마그네트론 코스퍼터링을 이용한 Si3N4 매트릭스 내부의 실리콘 양자점 제조연구
Fabrication of Silicon Quantum Dots in Si3N4 Matrix Using RF Magnetron Co-Sputtering
하린, 김신호, 이현주, 박영빈, 이정철1, 배종성2, 김양도†
  • 부산대학교 재료공학부
  • 1한국에너지기술연구원 태양광 연구단
  • 2한국기초과학연구원 부산센터
Rin Ha, Shinho Kim, Hyun Ju Lee, Youngbin Park, Jung Chul Lee1, Jong-seong Bae2, and Yangdo Kim3, †
  • School of Materials Science and Engineering, Pusan National University, Jangjeon-Dong, Kumjung-Gu, Busan, Korea
  • 1Photovoltaic Research Center, Korea Institute of Energy Research, Jang-Dong, Yuseong-Gu, Daejeon, Korea
  • 2Busan center, Korea Science Institute, Jangjeon-Dong, Kumjung-Gu, Busan, Korea
  • 3School of Materials Science and Engineering,, Pusan National University, Jangjeon-Dong, Kumjung-Gu, Busan, Korea
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Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and Si3N4 layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the 840 cm.1 peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the 1100 cm.1 peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-N4 bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at 1100oC for at least one hour is necessary to precipitate the silicon quantum dots in the SiNx matrix.
Keywords:Si quantum dots;superlattice;silicon nitride;solar cells
  1. Green MA, Third Generation Photovoltaics : Advanced Solar Energy Conversion, 12th ed., p.2-3, Springer, Berlin, Germany (2006). (2006)
  2. Bruton TM, Luthardt G, Rasch LD, Roy K, Dorrity IA, Garrard B, Teale L, Alonso J, Ugalde U, Declerq K, Nijs J, Szlufcik J, Rauber A, Wettling W, Vallera A, Conference Record, 14th European Photovoltaic Solar Energy Conference (June/July 1997), Barcelona p.11-16. (1997)
  3. Carlson DE, Wronski CR, Top. Appl. Phys., 36, 287 (1985)
  4. Nelson J, The Physics of Solar Cells, p.289-323, Imperial College Press, London, UK (2003). (2003)
  5. ARC Photovoltaics Centre of Exceleence, 2008 Annual Report, p.69-70 (2009). (2009)
  6. ARC Photovoltaics Centre of Exceleence, 2009 Annual Report, p.77 (2010). (2010)
  7. Cho EC, Green MA, Conibeer G, Song DY, Cho YH, Scardera G, Huang SJ, Park S, Hao XJ, Huang YD, Dao LV, Adv. Opt. Electron. Microsc., 2007, 69578 (2007)
  8. Kim HJ, Moon J, Cho JS, Park SH, Yoon KH, Song J, OB, Lee JC, Korean J. Mater. Res., 20(6), 289 (2010)
  9. Conibeer G, Green M, Cho EC, Konig D, Cho YH, Fangsuwannarak T, Scardera G, Pink E, Huang YD, Puzzer T, Huang SJ, Song DY, Flynn C, Park S, Hao XJ, Mansfield D, Thin Solid Films, 516(20), 6748 (2008)
  10. Park S, Cho E, Song DY, Conibeer G, Green MA, Sol. Energy Mater. Sol. Cells, 93(6-7), 684 (2009)
  11. Cho EC, Park SW, Hao XJ, Song DY, Conibeer G, Park SC, Green MA, Nanotechnology,, 19, 245201 (2008)
  12. Fangsuwannarak T, Conibeer G, Scardera G, Cho EC, Pink E, Huang Y, Green MA, in Proceedings of SPIE, 6415, 641508 (2006)
  13. Kim TY, Park NM, Kim KH, Sung GY, Ok YW, Seong TY, Choi CJ, Appl. Phys. Lett., 85(22), 5355 (2004)
  14. Song DY, Cho EC, Conibeer G, Huang Y, Green MA, Appl. Phys. Lett., 91(12), 123510 (2007)
  15. Song DY, Cho EC, Conibeer G, Huang Y, Flynn C, Green MA, J. Appl. Phys., 103(8), 083544 (2008)
  16. Scardera G, Puzzer T, Pink E, Conibeer G, Green MA, Proc. of SPIE, 6415, 641502 (2006)
  17. Scardera G, Puzzer T, Conibeer G, Green MA, J. Appl. Phys., 104(10), 104310 (2008)
  18. Tsu DV, Lucovsky G, Mantini MJ, Phys. Rev. B Condens. Matter., 33(10), 7069 (1986)
  19. Lucobsky G, Yang J, Chao SS, Tyler JE, Czubatyj W, Phys. Rev. B Condens. Matter., 28(6), 3234 (1983)
  20. Kanicki J, Warren WL, J. Non-Cryst. Solids, 164-166, 1055 (1993)
  21. Warren WL, Lenahan PM, Phys. Rev. B Condens. Matter., 42(3), 1773 (1990)
  22. Warren WL, Seager CH, Robertson J, Kanicki J, Poindexter EH, J. Electrochem. Soc., 143(11), 3685 (1996)
  23. Karcher R, Ley L, Johnson RL, Phys. Rev. B, 30(4), 1896 (1984)
  24. Hao XJ, Cho EC, Scardera G, Bellet-Amalric E, Bellet D, Shen YS, Huang S, Huang YD, Conibeer G, Green MA, Thin Solid Films, 517(19), 5646 (2009)
  25. Conibeer G, Green M, Corkish R, Cho Y, Cho EC, Jiang CW, Fangsuwannarak T, Pink E, Huang Y, Puzzer T, Trupke T, Richards B, Shalav A, Lin KL, Thin Solid Films, 511-512, 654 (2006)