산화아연-탄소나노튜브 복합체의 일산화질소 가스 감지 특성에 미치는 코발트 첨가 효과

정훈철; 안은성; 웬래훙; 오동훈; 김효진; 김도진; Hoonchul Jung; Eunseong Ahn; Nguyen Le Hung; Donghoon Oh; Hyojin Kim; Dojin Kim

Korean Journal of Materials Research, Vol.19, No.11, 607-612, November, 2009

DOI10.3740/MRSK.2009.19.11.607 Export Citation

산화아연-탄소나노튜브 복합체의 일산화질소 가스 감지 특성에 미치는 코발트 첨가 효과

Effects of Co Doping on NO Gas Sensing Characteristics of ZnO-Carbon Nanotube Composites

정훈철, 안은성, 웬래훙, 오동훈, 김효진 ^†, 김도진

충남대학교 공과대학 재료공학과

Hoonchul Jung, Eunseong Ahn, Nguyen Le Hung, Donghoon Oh, Hyojin Kim^†, and Dojin Kim

Department of Materials Science and Engineering, Chungnam National University, Daejon 305-764, Korea

E-mail:

We investigated the effects of Co doping on the NO gas sensing characteristics of ZnO-carbon nanotube (ZnO-CNT) layered composites fabricated by coaxial coating of single-walled CNTs with ZnO using pulsed laser deposition. Structural examinations clearly confirmed a distinct nanostructure of the CNTs coated with ZnO nanoparticles of an average diameter as small as 10 nm and showed little influence of doping 1 at.% Co into ZnO on the morphology of the ZnO-CNT composites. It was found from the gas sensing measurements that 1 at.% Co doping into ZnO gave rise to a significant improvement in the response of the ZnO-CNT composite sensor to NO gas exposure. In particular, the Co-doped ZnO-CNT composite sensor shows a highly sensitive and fast response to NO gas at relatively low temperatures and even at low NO concentrations. The observed significant improvement of the NO gas sensing properties is attributed to an increase in the specific surface area and the role as a catalyst of the doped Co elements. These results suggest that Co-doped ZnOCNT composites are suitable for use as practical high-performance NO gas sensors.

Keywords:ZnO gas sensor;ZnO-carbon nanotube composite;Co doping effect

[References]

Grimes CA, Dickey EC, Pishko MV, ed., Encyclopedia of Sensors, American Scientific Publishers (2006). (2006)
Xu J, Pan Q, Shun Y, Tian Z, Sens. Actuators B, 66, 277 (2000)
Gao T, Wang TH, Appl. Phys. A, 80, 1451 (2005)
Fan Z, Lu JG, J. Nanosci. Nanotech., 5, 1561 (2005)
Dikovska AO, Sens. Actuators A, 140, 19 (2007)
Park SM, Zhang SL, Huh JS, Korean J. Mater. Res., (in Korean), 18(7), 367 (2008)
Kong J, Franklin NR, Zhou C, Chapline MC, Peng S, Cho J, Dai H, Science, 287, 622 (2000)
Collins PG, Bradley K, Ishigami M, Zettl A, Science, 287(5459), 1801 (2000)
Wisitsoraat A, Tuantranont A, Thanachyanont C, Singjai P, in Proceedings of the 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems (Zhuhai, China, January 2006), p. 1487. (2006)
An KH, Jeong SY, Hwang HR, Lee YH, Adv. Mater., 16(12), 1005 (2004)
Park SY, Jung H, Ahn E, Nguyen LH, Kang Y, Kim H, Kim D, Korean J. Mater. Res., 18(12), 655 (2008)
Ahlers S, Muller G, Doll T, in Encyclopedia of Sensors, p.413, ed. C. A. Grimes, E. C. Dickey and M. V. Pishko, American Scientific Publishers, Stevenson Ranch, USA (2006) (2006)
Chang JF, Kuo HH, Leu IC, Hon MH, Sens. Actuators B, 84, 258 (2002)
Nanto H, Minami TT, Takata S, J. Appl. Phys., 60, 482 (1986)
Tien LC, Sadik PW, Norton DP, Voss LF, Pearton SJ, Wang HT, Kang BS, Ren F, Jun J, Lin J, Appl. Phys. Lett., 87, 222106 (2005)
Kang YJ, Oh DH, Song HJ, Jung JY, Jung H, Cho YS, Kim DJ, Korean J. Mater. Res., 18(5), 253 (2008)
Solis JL, Lantto V, Sens. Actuators B, 48, 322 (1998)
Scott RWJ, Yang SM, Chabanis G, Coombs N, Williams DE, Ozin GA, Adv. Mater., 13(19), 1468 (2001)
Naisbitt SC, Pratt KFE, Williams DE, Parkin IP, Sens. Actuators B, 114, 969 (2006)

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[1] Grimes CA, Dickey EC, Pishko MV, ed., Encyclopedia of Sensors, American Scientific Publishers (2006). (2006)

[2] Xu J, Pan Q, Shun Y, Tian Z, Sens. Actuators B, 66, 277 (2000)

[3] Gao T, Wang TH, Appl. Phys. A, 80, 1451 (2005)

[4] Fan Z, Lu JG, J. Nanosci. Nanotech., 5, 1561 (2005)

[5] Dikovska AO, Sens. Actuators A, 140, 19 (2007)

[6] Park SM, Zhang SL, Huh JS, Korean J. Mater. Res., (in Korean), 18(7), 367 (2008)

[7] Kong J, Franklin NR, Zhou C, Chapline MC, Peng S, Cho J, Dai H, Science, 287, 622 (2000)

[8] Collins PG, Bradley K, Ishigami M, Zettl A, Science, 287(5459), 1801 (2000)

[9] Wisitsoraat A, Tuantranont A, Thanachyanont C, Singjai P, in Proceedings of the 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems (Zhuhai, China, January 2006), p. 1487. (2006)

[10] An KH, Jeong SY, Hwang HR, Lee YH, Adv. Mater., 16(12), 1005 (2004)

[11] Park SY, Jung H, Ahn E, Nguyen LH, Kang Y, Kim H, Kim D, Korean J. Mater. Res., 18(12), 655 (2008)

[12] Ahlers S, Muller G, Doll T, in Encyclopedia of Sensors, p.413, ed. C. A. Grimes, E. C. Dickey and M. V. Pishko, American Scientific Publishers, Stevenson Ranch, USA (2006) (2006)

[13] Chang JF, Kuo HH, Leu IC, Hon MH, Sens. Actuators B, 84, 258 (2002)

[14] Nanto H, Minami TT, Takata S, J. Appl. Phys., 60, 482 (1986)

[15] Tien LC, Sadik PW, Norton DP, Voss LF, Pearton SJ, Wang HT, Kang BS, Ren F, Jun J, Lin J, Appl. Phys. Lett., 87, 222106 (2005)

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[18] Scott RWJ, Yang SM, Chabanis G, Coombs N, Williams DE, Ozin GA, Adv. Mater., 13(19), 1468 (2001)

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