Graphene has been effectively synthesized on Ni/SiO2/Si substrates with CH4 (1 SCCM) diluted in Ar/H2(10%) (99 SCCM) by using an inductively-coupled plasma-enhanced chemical vapor deposition. Graphene was formed on the entire surface of the 500 nm thick Ni substrate even at 700 oC, although CH4 and Ar/H2 gas were supplied under plasma of 600 W for 1 second. The Raman spectrum showed typical graphene features with D, G, and 2D peaks at 1356, 1584, and 2710 cm-1, respectively. With increase of growth temperature to 900 oC, the ratios of the D band intensity to the G band intensity and the 2D band intensity to the G band intensity were increased and decreased, respectively. The results were strongly correlated to a rougher and coarser Ni surface due to the enhanced recrystallization process at higher temperatures. In contrast, highquality graphene was synthesized at 1000 oC on smooth and large Ni grains, which were formed by decreasing Ni deposition thickness to 300 nm.