This study investigated dry etching of acrylic in capacitively coupled SF6, SF6/O2 and SF6/CH4 plasma under a low vacuum pressure. The process pressure was 100 mTorr and the total gas flow rate was fixed at 10 sccm. The process variables were the RIE chuck power and the plasma gas composition. The RIE chuck power varied in the range of 25~150 W. SF6/O2 plasma produced higher etch rates of acrylic than pure SF6 and O2 at a fixed total flow rate. 5 sccm SF6 / 5 sccm O2 provided 0.11 μm/min and 1.16 μm/min at 25W and 150W RIE of chuck power, respectively. The results were nearly 2.9 times higher compared to those at pure SF6 plasma etching. Additionally, mixed plasma of SF6/CH4 reduced the etch rate of acrylic. 5 sccm SF6/5 sccm CH4 plasma resulted in 0.02 μm/min and 0.07 μm/min at 25W and 150W RIE of chuck power. The etch selectivity of acrylic to photoresist was higher in SF6/O2 plasma than in pure SF6 or SF6/CH4 plasma. The maximum RMS roughness (7.6 nm) of an etched acrylic surface was found to be 50% O2 in SF6/O2 plasma. Besides the process regime, the RMS roughness of acrylic was approximately 3~4 nm at different percentages of O2 with a chuck power of 100W RIE in SF6/O2 plasma etching.