RF 스퍼터를 이용하여 제작된 a-Si:H 박막의 어닐링 효과에 관한 연구

김도윤; 김인수; 최세영; Do Yun Kim; In Soo Kim; Se-Young Choi

Korean Journal of Materials Research, Vol.19, No.2, 102-107, February, 2009

DOI10.3740/MRSK.2009.19.2.102 Export Citation

RF 스퍼터를 이용하여 제작된 a-Si:H 박막의 어닐링 효과에 관한 연구

Effect of Annealing on a-Si:H Thin Films Fabricated by RF Magnetron Sputtering

김도윤, 김인수, 최세영^†

연세대학교 신소재공학과

Do Yun Kim, In Soo Kim, and Se-Young Choi^†

School of New Materials Science and Engineering, Yonsei University, 134 Shinchondong, Seodaemungu, Seoul 120-749, Republic of Korea

E-mail:

The effect of annealing under argon atmosphere on hydrogenated amorphous silicon (a-Si:H) thin films deposited at room temperature and 300 oC using Radio Frequency (RF) magnetron sputtering has been investigated. For the films deposited at room temperature, there was not any increase in hydrogen content and optical band gap of the films, and as a result, quality of the films was not improved under any annealing conditions. For the films deposited at 300 oC, on the other hand, significant increases in hydrogen content and optical band gap were observed, whereas values of microstructure parameter and dark conductivity were decreased upon annealing below 300 oC. In this study, it was proposed that the Si-HX bonding strength is closely related to deposition temperature. Also, the improvement in optical, electrical and structural properties of the films deposited at 300 oC was originated from thermally activated hydrogen bubbles, which were initially trapped at microvoids in the films.

Keywords:hydrogenated amorphous silicon;hydrogen bubbles;microvoids;annealing;deposition temperature

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[2] Stiebig H, Moulin E, Rech B, Thin Solid Films, 515(19), 7522 (2007)

[3] Lee CH, Sazonov A, Nathan A, Appl. Phys. Lett., 86, 222106 (2005)

[4] Danesh P, Pantchev B, Schmidt B, Grambole D, Semicond. Sci. Tech., 19(12), 1422 (2004)

[5] Tauc J, Grigorovici R, Vancu A, Phys. Stat. Sol., 15, 627 (1966)

[6] Lucovsky G, Nemanich RJ, Knights JC, Phys. Rev. B, 19(4), 2064 (1979)

[7] Brodsky MH, Cardona M, Cuomo JJ, Phys. Rev. B, 16(8), 3556 (1977)

[8] Langford AA, Fleet ML, Nelson BP, Lanford WA, Maley N, Phys. Rev. B, 45(23), 13367 (1992)

[9] Rinnert H, Vergnat M, Marchal G, Bruneau A, J. Appl. Phys., 83(2), 1103 (1998)

[10] Deneuville A, Mini A, Bruyere JC, Solid State Phys., 14(30), 4531 (1981)

[11] Chabal YJ, Patel CKN, Phys. Rev. Lett., 53(18), 1771 (1984)

[12] Futako W, Kamiya T, Formann CM, Shimizu I, J. Non-Cryst. Solids, 266(1), 630 (2000)

[13] Fortmann CM, Phys. Rev. Lett., 81(17), 3683 (1998)

[14] Tanaka K, Maruyama E, Shimada T, Okamoto H, Sato T, Amorphous Silicon, p.106, John Wiley & Sons, England, (1999). (1999)

[15] Cody GD, Wronski CR, Abeles B, Stephens RB, Brooks B, Sol. Cells, 2(3), 227 (1980)

[16] Won SH, Chung JK, Lee CB, Nam HC, Hur JH, Jang J, J. Electrochem. Soc., 151(3), G167 (2004)