전자빔증발법에 의한 Ba(Ti,Sn)O3막의 제조 및 특성

박상식; Sang-Shik, Park

Korean Journal of Materials Research, Vol.18, No.7, 373-378, July, 2008

DOI10.3740/MRSK.2008.18.7.373 Export Citation

전자빔증발법에 의한 Ba(Ti,Sn)O3막의 제조 및 특성

Synthesis and Properties of Ba(Ti,Sn)O3 Films by E-Beam Evaporation

박상식^†

경북대학교 신소재공학과

Sang-Shik, Park^†

Dept. of Advanced Materials Engineering, Kyungpook National University, 386, Gajang-dong, Sangju, Kyungpook, 742-711, Korea

E-mail:

Ba(Ti,Sn)O3 thin films, for use as dielectrics for MLCCs, were grown from Sn doped BaTiO3 sources by e-beam evaporation. The crystalline phase, microstructure, dielectric and electrical properties of films were investigated as a function of the (Ti＋Sn)/Ba ratio. When BaTiO3 sources doped with 20~50 mol% of Sn were evaporated, BaSnO3films were grown due to the higher vapor pressure of Ba and Sn than of Ti. However, it was possible to grow the Ba(Ti,Sn)O3 thin films with ≤15 mol% of Sn by co-evaporation of BTS and Ti metal sources. The (Ti＋Sn)/Ba and Sn/Ti ratio affected the microstructure and surface roughness of films and the dielectric constant increased with increasing Sn content. The dielectric constant and dissipation factor of Ba(Ti,Sn)O3 thin films with ≤15 mol% of Sn showed the range of 120 to 160 and 2.5~5.5% at 1 KHz, respectively. The leakage current density of films was order of the 10.9~10.8 A/cm2 at 300 KV/cm. The research results showed that it was feasible to grow the Ba(Ti,Sn)O3 thin films as dielectrics for MLCCs by an e-beam evaporation technique.

Keywords:Ba(Ti,Sn)O3 film;MLCC;evaporation;vapor pressure

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