탄소나노튜브 캐소드의 전계방출 특성에 대한 표면 형상과 부착력의 영향

정혁; 조유석; 강영진; 김도진; Hyuk Jung; Yousuk Cho; Youngjin Kang; Dojin Kim

Korean Journal of Materials Research, Vol.18, No.5, 277-282, May, 2008

DOI10.3740/MRSK.2008.18.5.277 Export Citation

탄소나노튜브 캐소드의 전계방출 특성에 대한 표면 형상과 부착력의 영향

Effect of Surface Morphology and Adhesion Force on the Field Emisson Properties of Carbon Nanotube Based Cathode

정혁, 조유석, 강영진, 김도진 ^†

충남대학교 공과대학 재료공학과 나노 재료 응용 실험실

Hyuk Jung, Yousuk Cho, Youngjin Kang, and Dojin Kim^†

Department of Materials engineering, Chungnam National University, Daejon, 305-764 Korea

E-mail:

The effects of the field emission property in relation to the surface morphology and adhesion force were investigated. The single-wall-nanotube-based cathode was obtained by use of an in-situ arc discharge synthesis method, a screen-printing method and a spray method. The morphologies of the formed emitter layers were very different. The emission stability and uniformity were dramatically improved by employing an in-situ arc discharge synthesis method. In this study, it was confirmed that the current stability and uniformity of the field emission of the cathode depend on the surface morphology and adhesion force of the emitters. The current stability of the field emission device was also studied through an electrical aging process by varying the current and electric field.

Keywords:single walled carbon nanotube;field emission;surface morphology;adhesion force;electrical aging

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[Related Articles]

[1] Spindt CA, Brodie I, Humphrey L, Westerberg ER, J. Appl. Physics, 47, 5248 (1976)

[2] Meyer R, Tech. Dig. Euro Disp., 90, 26 (1990)

[3] Kumar N, SID 1994 Dig. Tech. Pap., 43 (1994)

[4] Dyke WP, Dolan WW, Adv. In Electronics and Electron Phys, 8, 90 (1956)

[5] Brodie I, J. Appl. Phys, 35, 2324 (1964)

[6] Iijima S, Nature, 354, 56 (1991)

[7] Javey A, Guo J, Wang Q, Lundstrom M, Dai H, Nature, 424, 654 (2003)

[8] Deheer WA, Chatelain A, Ugarte D, Science, 270(5239), 1179 (1995)

[9] Baughman RH, Zakhidov AA, De Heer WA, Science, 297, 787 (2002)

[10] Lee YD, SID 2005, Dig. Tech. Pap., 1617 (2005). (2005)

[11] Chi EJ, SID 2005, Dig. Tech. Pap., 1620 (2005). (2005)

[12] Park JH, Choi JH, Moon JS, Yoo JB, Kim HY, Carbon, 43, 698 (2005)

[13] Hata K, Takakura A, Saito Y, Utlramicroscopy, 95, 107 (2003)

[14] Lee JD, Oh CW, Park BG, J. Vac. Sci. Technol. B, 21, 1071 (2003)

[15] Ren ZF, Huang ZP, Xu JW, Wang JH, Bush P, Siegal MP, Provencio PN, Science, 282(5391), 1105 (1998)

[16] Choi WB, Chung DS, Kang JH, Kim HY, Jin YW, Han IT, Appl. Phys. Lett., 75, 3129 (1999)

[17] Jeong HJ, Carbon, 44, 2689 (2006)

[18] Dyke WP, Dolan WW, Adv. In Electronics and Electron Phys., 8, 153 (1956)

[19] Ancona MG, IEDM Tech. Dig., 803 (1994)