Phase Change Characteristics of Sb-Based Phase Change Materials

Sung-Jin Park; In Soo Kim,; Sang-Kyun Kim; Se-Young Choi

Korean Journal of Materials Research, Vol.18, No.2, 61-64, February, 2008

DOI10.3740/MRSK.2008.18.2.061 Export Citation

Phase Change Characteristics of Sb-Based Phase Change Materials

Sung-Jin Park, In Soo Kim,, Sang-Kyun Kim, and Se-Young Choi^†

School of Materials Science & Engineering, Yonsei University, 134 Shinchon-Dong, Seoul 120-749, Korea

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Electrical·optical switching and structural transformation of Ge15Sb85, Sb65Se35 and N2.0 sccm doped Sb83Si17 were studied to investigate the phase change characteristics for PRAM application. Sb-based materials were deposited by a RF magnetron co-sputtering system and the phase change characteristics were analyzed using an X-ray diffractometer (XRD), a static tester and a four-point probe. Doping Ge, Se or Si atoms reinforced the amorphous stability of the Sb-based materials, which affected the switching characteristics. The crystallization temperature of the Sb-based materials increased as the concentration of the Ge, Se or Si increased. The minimum time of Ge15Sb85, Sb65Se35 and N2.0 sccm doped Sb83Si17 for crystallization was 120, 50 and 90 ns at 12mW, respectively. Sb65Se35 was crystallized at 170oC. In addition, the difference in the sheet resistances between amorphous and crystalline states was higher than 104Ω/γ.

Keywords:phase change materials;Sb-based materials;PRAM

[References]

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Kang MJ, Choi SY, Wamwangi D, Wang K, Steimer C, Wuttig M, J. Appl. Phys., 98, 014904 (2005)
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[Referenced By]

[1] Feinleib J, Ovshinsky SR, J. Non-Cryst. Solids, 4, 561 (1970)

[2] Solis J, Afonso CN, Hyde SCW, Barry NP, French PMW, Phys. Rev. Lett., 76, 2519 (1996)

[3] Ito K, Tashiro H, Harigaya M, Suzuki E, Tani K, Yiwata N, Toyoshima N, Makita K, Kitano A, Kato K, Mater. Res. Soc. Symp. Proc., 803, HH5.2.1, ed. L. Hesselink and A. Mijiritskii, Mater. Res. Soc., Pittsburgh, USA (2004).

[4] Callan JP, Kim AMT, Roeser CAD, Mazur E, Phys. Rev. Lett., 86, 2650 (2001)

[5] Kang MJ, Choi SY, Wamwangi D, Wang K, Steimer C, Wuttig M, J. Appl. Phys., 98, 014904 (2005)

[6] Pieterson L, Schijndel M, Rijpers JCN, Kaiser M, Appl. Phys., Lett., 83, 1373 (2003)

[7] Solis J, Afonso CN, Trull JF, Morilla MC, J. Appl. Phys., 75, 7788 (1994)

[8] Bez R, Pirovano A, Mater. Sci. in Semiconductor Processing, 7, 349 (2004)

[9] Yamada N, Ohno E, Nishiuchi K, Akahira N, Takao M, J. Appl. Phys., 69, 2849 (1991)