화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Materials Research, Vol.18, No.1, 45-50, January, 2008
DOI10.3740/MRSK.2008.18.1.045  Export Citation
Au stud 범프의 금속간화합물 성장거동에 미치는 시효처리의 영향
Effect of Thermal Aging on Intermetallic Compound Growth Kinetics of Au Stud Bump
임기태, 이장희, 김병준1, 이기욱2, 이민재2, 주영창1, 박영배†
  • 안동대학교 신소재공학부
  • 1서울대학교 재료공학부
  • 2앰코테크놀로지코리아 기술연구소
Gi-Tae Lim, Jang-Hee Lee, Byoung-Joon Kim1, Ki-Wook Lee2, Min-Jae Lee2, Young-Chang Joo1, and Young-Bae Park3, †
  • School of Materials Science and Engineering, Andong, Andong National University, Andong 760-749, Korea
  • 1School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
  • 2R&D Center Amkor Technology Korea Inc., Seoul 133-706, Korea
  • 3School of Materials Science and Engineering, Andong National University, Andong 760-749, Korea
E-mail:
Microstructural evolution and the intermetallic compound (IMC) growth kinetics in an Au stud bump were studied via isothermal aging at 120, 150, and 180oC for 300hrs. The AlAu4 phase was observed in an Al pad/Au stud interface, and its thickness was kept constant during the aging treatment. AuSn, AuSn2, and AuSn4 phases formed at interface between the Au stud and Sn. AuSn2, AuSn2/AuSn4, and AuSn phases dominantly grew as the aging time increased at 120oC, 150oC, and 180oC, respectively, while (Au,Cu)6Sn5/Cu3Sn phases formed at Sn/Cu interface with a negligible growth rate. Kirkendall voids formed at AlAu4/Au, Au/Au-Sn IMC, and Cu3Sn/Cu interfaces and propagated continuously as the time increased. The apparent activation energy for the overall growth of the Au-Sn IMC was estimated to be 1.04 eV.
Keywords:intermetallic compound;growth kinetics;Kirkendall void;au stud bump;activation energy
  1. International Technology Roadmap for Semiconductors 1999 Edition, “Assembly & Packaging”, http://www. itrs.net/Links/2000UpdateFinal/AssemblyPkg2000final.pdf , updated 14 January 2008. (2008)
  2. Shin MS, Kim YH, J. Electron. Mater., 32(12), 1448 (2003)
  3. Lee TK, Zhang S, Wong CC, Tan AC, Hadikusuma D, Thin Solid Films, 504(1-2), 441 (2006)
  4. Kim PG, Tu KN, Mater. Chem. Phys., 53(2), 165 (1998)
  5. Lee TK, Zhang S, Wong CC, Tan AC, Mater. Sci., Eng. A, 427, 136 (2006)
  6. Tian Y, Wang C, Mater. Sci. Eng. B, 95, 254 (2002)
  7. Schaefer RM, Fournelle A, Liang J, J. Electron. Mater., 27, 1167 (1998)
  8. Imasato E, Araki M, Shimizu I, Ohno Y, in Proceedings of Znd Electron. Packag. Technol. conf., 338 (1998). (1998)
  9. Tu KN, Thompson RD, Acta metall., 30, 947 (1982)
  10. Chan YC, lex A, So CK, Lai JKL, Mater. Sci. Eng. B, 55, 5 (1998)
  11. Tsai CM, Luo WC, Chang CW, Shieh YC, Kao CR, J. Electron. Mater., 33(12), 1424 (2004)
  12. Yoon JW, Jung SB, J. Mater. Sci., 39(13), 4211 (2004)