Metal-Insulator-Metal 캐패시터의 응용을 위한 비정질 BaTi4O9 박막의 전기적 특성

홍경표; 정영훈; 남산; 이확주; Kyoung Pyo Hong; Young-Hun Jeong; Sahn Nahm; Hwack Joo Lee

Korean Journal of Materials Research, Vol.17, No.11, 574-579, November, 2007

DOI10.3740/MRSK.2007.17.11.574 Export Citation

Metal-Insulator-Metal 캐패시터의 응용을 위한 비정질 BaTi4O9 박막의 전기적 특성

Electrical Properties of the Amorphous BaTi4O9 Thin Films for Metal-Insulator-Metal Capacitors

홍경표, 정영훈, 남산 ^†, 이확주¹

고려대학교 신소재공학과
¹한국표준과학연구원 전략기술연구부

Kyoung Pyo Hong, Young-Hun Jeong, Sahn Nahm^†, and Hwack Joo Lee¹

Department of Materials Science and Engineering, Korea University, 1-5 Ka, Anam-Dong, Sungbuk-Ku, Seoul 136-701, Korea
¹Division of Advanced Technology, Korea Research Institute of Standard and Science, Deaduk Science Town, Taejeon 305-600, Korea

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Amorphous BaTi4O9 (BT4) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous BT4 film deposited at room temperature showed the film was grown well on the substrate. The amorphous BT4 film had a large dielectric constant of 32, which is similar to that of the crystalline BT4 film. The leakage current density of the BT4 film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the BT4 film with a thickness of ＜70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ≥96 nm, possibly due to the dipolar relaxation. The 55 nm-thick BT4 film had a high capacitance density of 5.1 fF/μm2 with a low leakage current density of 11.6 nA/cm2 at 2 V. Its quadratic and linear VCCs were 244 ppm/V2 and .52 ppm/V, respectively, with a low temperature coefficient of capacitance of 961 ppm/oC at 100 kHz. These results confirmed the potential suitability of the amorphous BT4 film for use as a high performance metal-insulatormetal (MIM) capacitor.

Keywords:BaTi4O9;MIM capacitor;High-k;Voltage coefficient of capacitance (VCC);Temperature coefficient of capacitance (TCC)

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Hu H, Zhu C, Lu YF, Li MF, Cho BJ, Choi WK, IEEE Electron Device Lett., 23, 514 (2002)
Kim SJ, Cho BJ, Li MF, Yu X, Zhu C, Chin A, Kwong DL, IEEE Electron Device Lett., 24, 387 (2003)
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Wenger C, Dabrowski J, Zaumseil P, Sorge R, Formanek P, Lippert G, Mussig HJ, 7, 227 (2004)
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Chiang KC, Huang CC, Chen GL, Chen WJ, Kao HL, Wu YH, Chin A, McAlister SP, IEEE Trans. Electron Devices, 53, 2312 (2006)
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[2] Hu H, Zhu C, Lu YF, Li MF, Cho BJ, Choi WK, IEEE Electron Device Lett., 23, 514 (2002)

[3] Kim SJ, Cho BJ, Li MF, Yu X, Zhu C, Chin A, Kwong DL, IEEE Electron Device Lett., 24, 387 (2003)

[4] Ding SJ, Hu H, Zhu C, Li MF, Kim SJ, Cho BJ, Chan DSH, Yu MB, Du AY, Chin A, Kwong DL, IEEE Electron Device Lett., 25, 681 (2004)

[5] Lee SY, Kim HS, Mclntyre PC, Saraswat KC, Byun JS, Appl. Phys. Lett., 82, 2874 (2003)

[6] Wenger C, Dabrowski J, Zaumseil P, Sorge R, Formanek P, Lippert G, Mussig HJ, 7, 227 (2004)

[7] Kim SJ, Cho BJ, Yu MB, Li MF, Xiong YZ, Zhu C, Chin A, Kwong DL, IEEE Electron Devices Lett., 26, 625 (2005)

[8] Chiang KC, Huang CC, Chin A, Chen WJ, McAlister SP, Chiu HF, Chen JR, Chi CC, IEEE Electron Device Lett., 26, 504 (2005)

[9] Kim SJ, Cho BJ, Li MF, Ding SJ, Zhu C, Yu MB, Narayanan B, Chin A, Kwong DL, IEEE Electron Device Lett., 25, 538 (2004)

[10] Kim SJ, Cho BJ, Yu MB, Li MF, Xiong YZ, Zhu C, Chin Z, Kwong DL, IEEE Electron Device Lett., 26, 625 (2005)

[11] Chiang KC, Huang CC, Chen GL, Chen WJ, Kao HL, Wu YH, Chin A, McAlister SP, IEEE Trans. Electron Devices, 53, 2312 (2006)

[12] Wakino K, Minai K, Tamura H, J. Am. Ceram. Soc., 67, 278 (1984)

[13] Negas T, Yeager G, Bell S, Coats N, Minis I, Am. Ceram. Soc. Bull., 72, 80 (1993)

[14] Choy JH, Han YS, Sohn JH, Itoh M, J. Am. Ceram. Soc., 78, 1169 (1995)

[15] Cernea M, Chirtop E, Neacsu D, Pasuk I, Iordanescu S, J. Am. Ceram. Soc., 85(2), 499 (2002)

[16] Jang BY, Jeong YH, Lee SJ, Lee KJ, Nahm S, Sun HJ, Lee HJ, J. Am. Ceram. Soc., 88(5), 1209 (2005)

[17] Jang BY, Jeong YH, Lee SJ, Lee KJ, Nahm S, Sun HJ, Lee HJ, J. Euro. Cer. Soc., 26, 1913 (2006)

[18] Jang BY, Kim BJ, Lee SJ, Lee KJ, Nahm S, Sun HJ, Lee HJ, Appl. Phy. Lett., 87, 112902 (2005)

[19] International Technology Roadmap for Semiconductors, (2005). (2005)

[20] Maissel LI, Glang R, Handbook of Thin Film Technology., p.14-13~14-25, McGraw-Hill, New York, (1970)

[21] Sze SM, Physics of Semiconductor., p. 403, John Wiley & Sons, New York, (1981) (1981)

[22] Kingery WD, Bowen HK, Uhlmann DR, Introduction to Ceramics., p. 662, John Wiley & Sons, New York, (1976) (1976)

[23] Zhu C, Hu H, Yu X, Kim SJ, Chin A, Li MF, Cho BJ, Kwong DL, in Proc. of IDEM, 879 (2003)

[24] Blonkowski S, Regache M, Halimaoui A, J. Appl. Phys., 90, 1501 (2001)

[25] Pontes FM, Leite ER, Longo E, Varela JA, Araujo EB, Eiras JA, Appl. Phys. Lett., 76, 2433 (2000)