분무열분해법에 의하여 제조한 FTO 투명전도막의 F/Sn 비율에 따른 전기, 광학적 특성과 XPS 분석

송철규; 김창열; 허승헌; 류도형; 좌용호; Chul-Kyu Song; Chang-Yeoul Kim; Seung-Hun Huh; Doh-Hyung Riut; Yong-Ho Choa

Korean Journal of Materials Research, Vol.17, No.7, 376-381, July, 2007

DOI10.3740/MRSK.2007.17.7.376 Export Citation

분무열분해법에 의하여 제조한 FTO 투명전도막의 F/Sn 비율에 따른 전기, 광학적 특성과 XPS 분석

Electrical and optical properties of FTO transparent conducting oxide film by spray pyrolysis and its XPS analysis based on F/Sn ratio

송철규, 김창열, 허승헌, 류도형^†, 좌용호 ¹

요업기술원 나노소재팀
¹한양대학교 정밀화학공학과

Chul-Kyu Song, Chang-Yeoul Kim, Seung-Hun Huh, Doh-Hyung Riut^†, and Yong-Ho Choa¹

Nano Materials Team, KICET, 233-5, Gasandong, Guemcheon-gu Seoul, 153-801, Korea
¹Department of Chemical Engineering, Hanyang University, Ansan, 426-719, Korea

E-mail:

Fluorine-doped tin oxide (FTO) thin film was coated on aluminosilicate glass at by spray pyrolysis method. In the range of 0-2.7 molar ratio of F/Sn, the variations of electrical conductivity and visible light transmission were investigated. At the F/Sn ratio of 1.765, the film showed the lowest electrical resistivity value of , the highest carrier concentration of , and about of electronic mobility. The FTO film showed a preferred orientation of (200) plane parallel to the substrate. X-ray photoelectron spectroscopy analysis results indicated that the contents of bonding are the highest at 1.765 of F/Sn molar ratio.

Keywords:Fluorine doped tin oxide;Transparent conducting oxide;Spray pyrolysis deposition

[References]

Lee SM, Ceramist, 6(3), 56 (2003)
Chopra KL, Major S, Pandya DK, Thin Solid Films, 102, 1 (1983)
Kawashima T, Ezure T, Okada K, Matsui H, Goto K, Tanabe N, J. Photochem. & Photobio. A: chemistry, 164, 199 (2004)
Gordon RG, MRS Bull., 25(16), 52 (2000)
New Transparent Oxide (in Japanese), Shinmeikosya, pp. 73-75 2005 (2005)
Shanthi S, Anuratha H, Subramanian C, Ramasamy P, J. Cryst. Growth, 194(3-4), 369 (1998)
Martinez AI, Acosta DR, Thin Solid Films, 483(1-2), 107 (2005)
Moholkar AV, Pawar SM, Rajpure KY, Bhosale CH, J. of the Electrochem. Soc., 61, 3030 (2007)
Rakhshani AE, Makdisi Y, Ramazaniyan HA, J. Appl. Phys., 83(2), 1049 (1998)
Elangovan E, Ramamurthi K, App. Surf. Sci., 249, 183196 (2005)
Japan Society for the Promotion of Science, Transperent Oxide optical & electrical materials 166th committe, Technology of Transparent Conducting Oxide (in Japanese), Ohmsha, p. 54-57, (1999) (1999)
Brewer SH, Franzen S, J. Alloys and Comp., 338, 73 (2002)
Veluchamy P, Tsuji M, Nishio T, Aramoto T, Higuchi H, Kumazawa S, Shibutani S, Nakajima J, Arita T, Ohyama H, Hanafusa A, Hibino T, Omura K, Sol. Energy Mater. Sol. Cells, 67(1-4), 179 (2001)
Smith A, Laurent JM, Smith DS, Bonnet JP, Clemente RR, Thin Solid Films, 266(1), 20 (1995)
Acosta DR, Zironi EP, Montoya E, Estrada W, Thin Solid Films, 288(1-2), 1 (1996)
Thangaraju B, Thin Solid Films, 402(1-2), 71 (2002)
Lim TY, Kim CY, Shim KB, Auh KH, J. Kor. Cryst. Growth & Cryst. Tech., 13(5), 254 (2003)
Martinez AI, Huerta K, O-Rueda de Leon JM, Acosta D, Malik O, Aguilar, J. Phys. D:Appl. Phys., 39, 5019 (2006)

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[1] Lee SM, Ceramist, 6(3), 56 (2003)

[2] Chopra KL, Major S, Pandya DK, Thin Solid Films, 102, 1 (1983)

[3] Kawashima T, Ezure T, Okada K, Matsui H, Goto K, Tanabe N, J. Photochem. & Photobio. A: chemistry, 164, 199 (2004)

[4] Gordon RG, MRS Bull., 25(16), 52 (2000)

[5] New Transparent Oxide (in Japanese), Shinmeikosya, pp. 73-75 2005 (2005)

[6] Shanthi S, Anuratha H, Subramanian C, Ramasamy P, J. Cryst. Growth, 194(3-4), 369 (1998)

[7] Martinez AI, Acosta DR, Thin Solid Films, 483(1-2), 107 (2005)

[8] Moholkar AV, Pawar SM, Rajpure KY, Bhosale CH, J. of the Electrochem. Soc., 61, 3030 (2007)

[9] Rakhshani AE, Makdisi Y, Ramazaniyan HA, J. Appl. Phys., 83(2), 1049 (1998)

[10] Elangovan E, Ramamurthi K, App. Surf. Sci., 249, 183196 (2005)

[11] Japan Society for the Promotion of Science, Transperent Oxide optical & electrical materials 166th committe, Technology of Transparent Conducting Oxide (in Japanese), Ohmsha, p. 54-57, (1999) (1999)

[12] Brewer SH, Franzen S, J. Alloys and Comp., 338, 73 (2002)

[13] Veluchamy P, Tsuji M, Nishio T, Aramoto T, Higuchi H, Kumazawa S, Shibutani S, Nakajima J, Arita T, Ohyama H, Hanafusa A, Hibino T, Omura K, Sol. Energy Mater. Sol. Cells, 67(1-4), 179 (2001)

[14] Smith A, Laurent JM, Smith DS, Bonnet JP, Clemente RR, Thin Solid Films, 266(1), 20 (1995)

[15] Acosta DR, Zironi EP, Montoya E, Estrada W, Thin Solid Films, 288(1-2), 1 (1996)

[16] Thangaraju B, Thin Solid Films, 402(1-2), 71 (2002)

[17] Lim TY, Kim CY, Shim KB, Auh KH, J. Kor. Cryst. Growth & Cryst. Tech., 13(5), 254 (2003)

[18] Martinez AI, Huerta K, O-Rueda de Leon JM, Acosta D, Malik O, Aguilar, J. Phys. D:Appl. Phys., 39, 5019 (2006)