플라즈마 포커스를 이용한 크롬 산화물 박막 성장의 분위기 기체 압력 의존성 연구

정규호; 이재갑; 임현식; 이전국; Kyoo-Ho Jung; Jae-Kap Lee; Hyun-Sik Im; L. Karpinski; M. Scholz; Jeon-Kook Lee

Korean Journal of Materials Research, Vol.17, No.6, 308-312, June, 2007

DOI10.3740/MRSK.2007.17.6.308 Export Citation

플라즈마 포커스를 이용한 크롬 산화물 박막 성장의 분위기 기체 압력 의존성 연구

Dependence of Gas Pressure on Cr Oxide Thin Film Growth Using a Plasma Focus Device

정규호, 이재갑, 임현식¹, , , 이전국^†

한국과학기술연구원 박막재료연구센터
¹동국대학교 반도체 과학과

Kyoo-Ho Jung^{1, 2}, Jae-Kap Lee¹, Hyun-Sik Im³, L. Karpinski⁴, M. Scholz⁴, and Jeon-Kook Lee^{1, †}

¹Thin Film Materials Research Center, KIST, Seoul, Korea 136-791
²Institute of Plsma Physics and Laser Microfusion(IPPLM), Hery Str.23, P.O.Box 49, 00-908Warsaw, Poland
³he Department of Semiconductor Science, Dongguk University, Seoul, Korea 100-715
⁴Institute of Plsma Physics and Laser Microfusion(IPPLM), Hery Str.23, P.O.Box 49, 00-908Warsaw, Poland, Korea

E-mail:

Chromium oxide thin films have been deposited on silicon substrates using a tabletop 9kJ mathertyped plasma focus (PF) device. Before deposition, pinch behavior with gas pressure was observed. Strength of pinches was increased with increasing working pressure. Deposition was performed at room temperature as a function of working pressure between 50 and 1000 mTorr. Composition and surface morphology of the films were analyzed by Auger Electron Spectroscopy and Scanning Electron Microscope, respectively. Growth rates of the films were decreased with pressure. The oxide films were polycrystalline containing some impurities, Cu, Fe, C and revealed finer grain structure at lower pressure.

Keywords:Plasma focus;ion emission;deposition;Cr oxide thin film;working pressure

[References]

Kelly H, Marquez A, Plasma Phys. Control. Fusion, 38, 942 (1996)
Pouzo J, Acuna H, Milanese M, Moroso R, Eur. Phys. J. D, 21, 97 (2002)
Moo SP, Chakrabarty CK, Lee S, IEEE Trans. Plasma Sci., 19, 3 (1991)
Feugeas JN, Lionch EC, De Gonzalez CO, Galambos G, J Appl. Phys, 64(5), 1 (1988)
Sadowski M, Zebrowski J, Rydygier D, Kucinski J, Plasma Phys. Control. Fusion, 30(6), 763 (1988)
Mather JW, Methods of Experimental Physics, 9B, Griem HR, Lovberg RH, 194-214, Academic, New York (1971) (1971)
Leopoldo S, Patricio S, Jose M etc., Braz. J. Phys., 34(4B), 1814 (2004)
Auluck SKH, IEEE Trans. Plasma Sci., 25(1) (1997)
Wong D, Patran A, Tan TL, Rawat RS, Lee P, IEEE Trans. Plasma Sci., 32(6), 2227 (2004)
Rombeld M et. Al., 12th IEEE Int. Conf. Pulsed power, 2, 1167 (1999)
Ray WF, Hewson R, Industry Applications Conference, Conference Record of the 2000 IEEE, 5, 3083 (2000)
Chow AY, Pardue MT, Chow VY, Peyman GA, hanping Liang, Perlman JI, Peachey NS, IEEE Trans. Neural Syst. Rehabil. Eng., 9(1) (2001)

[1] Kelly H, Marquez A, Plasma Phys. Control. Fusion, 38, 942 (1996)

[2] Pouzo J, Acuna H, Milanese M, Moroso R, Eur. Phys. J. D, 21, 97 (2002)

[3] Moo SP, Chakrabarty CK, Lee S, IEEE Trans. Plasma Sci., 19, 3 (1991)

[4] Feugeas JN, Lionch EC, De Gonzalez CO, Galambos G, J Appl. Phys, 64(5), 1 (1988)

[5] Sadowski M, Zebrowski J, Rydygier D, Kucinski J, Plasma Phys. Control. Fusion, 30(6), 763 (1988)

[6] Mather JW, Methods of Experimental Physics, 9B, Griem HR, Lovberg RH, 194-214, Academic, New York (1971) (1971)

[7] Leopoldo S, Patricio S, Jose M etc., Braz. J. Phys., 34(4B), 1814 (2004)

[8] Auluck SKH, IEEE Trans. Plasma Sci., 25(1) (1997)

[9] Wong D, Patran A, Tan TL, Rawat RS, Lee P, IEEE Trans. Plasma Sci., 32(6), 2227 (2004)

[10] Rombeld M et. Al., 12th IEEE Int. Conf. Pulsed power, 2, 1167 (1999)

[11] Ray WF, Hewson R, Industry Applications Conference, Conference Record of the 2000 IEEE, 5, 3083 (2000)

[12] Chow AY, Pardue MT, Chow VY, Peyman GA, hanping Liang, Perlman JI, Peachey NS, IEEE Trans. Neural Syst. Rehabil. Eng., 9(1) (2001)