3극형 탄소나노튜브 캐소드의 전계방출 특성에 미치는 표면처리에 관한 연구

이지언; 안영재; 이제헌; 정원섭; 조영래; Ji-Eon Lee; Young-Je An; Je-Hyun Lee; Won-Sub Chung; Young-Rae Cho

Korean Journal of Materials Research, Vol.17, No.3, 173-178, March, 2007

DOI10.3740/MRSK.2007.17.3.179 Export Citation

3극형 탄소나노튜브 캐소드의 전계방출 특성에 미치는 표면처리에 관한 연구

Study of Surface Treatments on Field Emission Properties for Triode-Type Carbon Nanotube Cathodes

이지언, 안영재, 이제헌¹, 정원섭, 조영래^†

부산대학교 재료공학부
¹국방기술품질원

Ji-Eon Lee, Young-Je An, Je-Hyun Lee¹, Won-Sub Chung, and Young-Rae Cho^†

School of Materials Science and Engineering, Pusan National University, Busan 609-735, Korea
¹Defense Agency for Technology and Quality, P.O. BOX 24, Chang-Won, Kyoung-Nam, 641-600, Korea

E-mail:

Carbon nanotube cathodes(CNT cathodes) with a trench structure similar to gated structure of triode-type cathode were fabricated by a screen printing method using multi-walled carbon nanotubes. The effects of surface treatments on CNT cathodes were investigated for high efficiency field emission displays(FEDs). A liquid method easily removed the organic residue and protruded the CNTs. Field emission properties were measured by using a diode-type mode. The liquid method produced a turn-on field of . The emission current density was measured about at the electric field of . The liquid method showed a high potential applicable to the surface treatment for triode-type FEDs.

Keywords:surface treatment;liquid method;field emission;CNT emitter;screen print

[References]

Kim JM, Choi WB, Lee NS, Jung JE, Diamond Relat. Mater., 9, 1184 (2000)
Wang QH, Setlur AA, Lauerhaas JM, Dai JY, Seelig EW, Chang RPH, Appl. Phys. Lett., 72, 2912 (1998)
Iijima S, Nature, 354, 56 (1991)
Milne WI, Teo KBK, Chhowalla M, Legagneux P, Prio G, Pribat D, Dig. Tech. Pap., 1120 (2002)
Choi WB, Chung DS, Kang JH, Kim HY, Jin YW, Han IT, Lee YH, Jung JE, Lee NS, Park GS, Kim JM, Appl. Phys. Lett., 75, 3129 (1999)
Kang S, Bae C, Son W, Kim MH, Yi J, Lee ST, Chang A, Kim JJ, Lee CR, Moon JH, Lim SH, Kim HS, Jang J, Dig. Tech. Pap., 802 (2003)
Ho JC, Chang YY, Liao JH, Cheng HC, Sheu JR, Hsiao MC, Lee CD, Huang SM, Cho CS, Huang WK, Lin WY, Lee CC, Dig. Tech. Pap., 372 (2002)
Meyer R, Tech. Dig. Euro Disp., 90, 26 (1990)
Zhao WJ, Sawada A, Takai M, Jpn. J. Appl. Phys., 41, 4314 (2002)
Kim DH, Kim CD, Lee HR, Carbon, 42, 1807 (2004)
Vink TJ, Gillies M, Kriege JC, Van de Laar HWJJ, Appl. Phys. Lett., 83, 3552 (2003)
Kim YC, Sohn KH, Cho YM, Yoo EH, Appl. Phys. Lett., 84, 5350 (2004)
Kim HJ, Han JH, Yang WS, Yoo JB, Park CY, Han IT, Park YJ, Jin YW, Jung JE, Lee NS, Kim JM, Mater. Sci. Eng., 16, 27 (2001)
An YJ, Lee JE, Cheon KE, Karim MA, Kim KS, Jung SJ, Cho YR, FEW'06, 170 (2006)
Lee S, Im WB, Kang JH, Jeon DY, J. Vac. Sci. Technol. B, 23(2), 745 (2005)
Bonard JM, Salvetat JP, Stockli T, Heer WA, Forro L, Chatelain A, Appl. Phys. Lett., 73, 918 (1998)
Xu NS, Chen Y, Deng SZ, Chen J, Ma XC, Wang EG, J. Phys. D: Appl. Phys., 34, 1597 (2001)
Cho YR, Lee JH, Hwang CS, Song YH, Uhm HS, Kim DH, Ahn SD, Chung CH, Kim BC, Cho KI, Jpn. J. Appl. Phys., 41, 1532 (2002)
Seong MS, Oh JS, Lee JE, Jung SJ, Kim TS, Cho YR, Korean J. Mater. Res., 16(1), 37 (2006)

[Referenced By]

[1] Kim JM, Choi WB, Lee NS, Jung JE, Diamond Relat. Mater., 9, 1184 (2000)

[2] Wang QH, Setlur AA, Lauerhaas JM, Dai JY, Seelig EW, Chang RPH, Appl. Phys. Lett., 72, 2912 (1998)

[3] Iijima S, Nature, 354, 56 (1991)

[4] Milne WI, Teo KBK, Chhowalla M, Legagneux P, Prio G, Pribat D, Dig. Tech. Pap., 1120 (2002)

[5] Choi WB, Chung DS, Kang JH, Kim HY, Jin YW, Han IT, Lee YH, Jung JE, Lee NS, Park GS, Kim JM, Appl. Phys. Lett., 75, 3129 (1999)

[6] Kang S, Bae C, Son W, Kim MH, Yi J, Lee ST, Chang A, Kim JJ, Lee CR, Moon JH, Lim SH, Kim HS, Jang J, Dig. Tech. Pap., 802 (2003)

[7] Ho JC, Chang YY, Liao JH, Cheng HC, Sheu JR, Hsiao MC, Lee CD, Huang SM, Cho CS, Huang WK, Lin WY, Lee CC, Dig. Tech. Pap., 372 (2002)

[8] Meyer R, Tech. Dig. Euro Disp., 90, 26 (1990)

[9] Zhao WJ, Sawada A, Takai M, Jpn. J. Appl. Phys., 41, 4314 (2002)

[10] Kim DH, Kim CD, Lee HR, Carbon, 42, 1807 (2004)

[11] Vink TJ, Gillies M, Kriege JC, Van de Laar HWJJ, Appl. Phys. Lett., 83, 3552 (2003)

[12] Kim YC, Sohn KH, Cho YM, Yoo EH, Appl. Phys. Lett., 84, 5350 (2004)

[13] Kim HJ, Han JH, Yang WS, Yoo JB, Park CY, Han IT, Park YJ, Jin YW, Jung JE, Lee NS, Kim JM, Mater. Sci. Eng., 16, 27 (2001)

[14] An YJ, Lee JE, Cheon KE, Karim MA, Kim KS, Jung SJ, Cho YR, FEW'06, 170 (2006)

[15] Lee S, Im WB, Kang JH, Jeon DY, J. Vac. Sci. Technol. B, 23(2), 745 (2005)

[16] Bonard JM, Salvetat JP, Stockli T, Heer WA, Forro L, Chatelain A, Appl. Phys. Lett., 73, 918 (1998)

[17] Xu NS, Chen Y, Deng SZ, Chen J, Ma XC, Wang EG, J. Phys. D: Appl. Phys., 34, 1597 (2001)

[18] Cho YR, Lee JH, Hwang CS, Song YH, Uhm HS, Kim DH, Ahn SD, Chung CH, Kim BC, Cho KI, Jpn. J. Appl. Phys., 41, 1532 (2002)

[19] Seong MS, Oh JS, Lee JE, Jung SJ, Kim TS, Cho YR, Korean J. Mater. Res., 16(1), 37 (2006)