ALD법으로 성장한 HfO2 박막의 열처리에 따른 특성변화

이재웅; 함문호; 맹완주; 김형준; 명재민; Jae Woong Lee; Mun-Ho Ham; Wan-Ju Maeng; Hyung Jun Kim; Jae Min Myung

Korean Journal of Materials Research, Vol.17, No.2, 96-99, February, 2007

DOI10.3740/MRSK.2007.17.2.096 Export Citation

ALD법으로 성장한 HfO2 박막의 열처리에 따른 특성변화

Effects of Post-Annealing on Properties of HfO2 Films Grown by ALD

이재웅, 함문호 , 맹완주¹, 김형준¹, 명재민^†

연세대학교 신소재공학과
¹포항공과대학교 신소재공학과

Jae Woong Lee, Mun-Ho Ham , Wan-Ju Maeng¹, Hyung Jun Kim¹, and Jae Min Myung^†

Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-Dong, Seoul 120-749 Korea
¹Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 790-784 Korea

E-mail:

The effects of post-annealing of high-k thin films grown by atomic layer deposition method were investigated by the annealing treatments of . capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the film remained to be amorphous, and the film was crystallized. The annealing treatment at resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.

Keywords:Hafnium oxide;ALD (Atomic Layer Deposition);dielectric constant;leakage current

[References]

Momose HS, Ono M, Yoshitomi T, Ohguro T, Nakamura SI, Saito M, Iwai H, IEDM Technical Digest, 593 (1994)
Zhang JY, Boyd IW, O'Sullivan BJ, Hurley PK, Kelly PV, Senateur JP, J. Non-Cryt. Solids, 303, 134 (2002)
Hong JH, Choi WJ, Myoung JM, Microelectron. Eng., 70(1), 35 (2003)
BALK P, Adv. Mater., 7(8), 703 (1995)
Hong JH, Moon TH, Myoung JM, Microelectron. Eng., 75, 263 (2004)
Ohshita Y, Ogura A, Hoshino A, Suzuki T, Hiiro S, Machida H, J. Cryst. Growth, 235(1-4), 365 (2002)
Kukli K, Ritala M, Sajavaara T, Keinonen J, Leskela M, Thin Solid Films, 416(1-2), 72 (2002)
Lim J, Lee C, Korean J. Mater. Res., 15(11), 741 (2005)
Kukli K, Ihanus J, Ritala M, Leskela M, Appl. Phys. Lett., 68, 3737 (1996)
Gusev EP, Cabral Jr C, Copel M, D'Emie C, Gribelyuk M, Mieroeleetron. Eng., 69, 145 (2003)
Lai BCM, Kung NH, Lee JYM, J. Appl. Phys., 85, 4087 (1999)
Taur Y, Ning TH, Fundamentals of Modem VLSI Devices (Cambridge University Press, New York, 1998), p. 82-86 (1998)
Chowdhury NA, Garg R, Misra D, Appl. Phys. Lett., 85, 3289 (2004)
Moon TH, Ham MH, Myoung JM, Appl. Phys. Lett., 86(10), 102903 (2005)
Song HJ, Lee CS, Kang SW, Eleetroehem. Solid State Lett., 4, F13 (2001)

[Related Articles]

[1] Momose HS, Ono M, Yoshitomi T, Ohguro T, Nakamura SI, Saito M, Iwai H, IEDM Technical Digest, 593 (1994)

[2] Zhang JY, Boyd IW, O'Sullivan BJ, Hurley PK, Kelly PV, Senateur JP, J. Non-Cryt. Solids, 303, 134 (2002)

[3] Hong JH, Choi WJ, Myoung JM, Microelectron. Eng., 70(1), 35 (2003)

[4] BALK P, Adv. Mater., 7(8), 703 (1995)

[5] Hong JH, Moon TH, Myoung JM, Microelectron. Eng., 75, 263 (2004)

[6] Ohshita Y, Ogura A, Hoshino A, Suzuki T, Hiiro S, Machida H, J. Cryst. Growth, 235(1-4), 365 (2002)

[7] Kukli K, Ritala M, Sajavaara T, Keinonen J, Leskela M, Thin Solid Films, 416(1-2), 72 (2002)

[8] Lim J, Lee C, Korean J. Mater. Res., 15(11), 741 (2005)

[9] Kukli K, Ihanus J, Ritala M, Leskela M, Appl. Phys. Lett., 68, 3737 (1996)

[10] Gusev EP, Cabral Jr C, Copel M, D'Emie C, Gribelyuk M, Mieroeleetron. Eng., 69, 145 (2003)

[11] Lai BCM, Kung NH, Lee JYM, J. Appl. Phys., 85, 4087 (1999)

[12] Taur Y, Ning TH, Fundamentals of Modem VLSI Devices (Cambridge University Press, New York, 1998), p. 82-86 (1998)

[13] Chowdhury NA, Garg R, Misra D, Appl. Phys. Lett., 85, 3289 (2004)

[14] Moon TH, Ham MH, Myoung JM, Appl. Phys. Lett., 86(10), 102903 (2005)

[15] Song HJ, Lee CS, Kang SW, Eleetroehem. Solid State Lett., 4, F13 (2001)