GaOOH 선구체의 스핀코팅에 의한 GaN 박막의 성장

이재범; 김선태; Jae-Bum Lee; Seon-Tai Kim

Korean Journal of Materials Research, Vol.17, No.1, 1-5, January, 2007

DOI10.3740/MRSK.2007.17.1.001 Export Citation

GaOOH 선구체의 스핀코팅에 의한 GaN 박막의 성장

Growth of GaN Thin-Film from Spin Coated GaOOH Precursor

이재범, 김선태^†

한밭대학교 신소재공학부

Jae-Bum Lee, and Seon-Tai Kim^†

Department of Materials Science and Engineering, Hanbat National University, Daejeon, 305-719, Korea

E-mail:

GaN thin fan were grown by spin coated colloidal GaOOH precursor. Polycrystalline GaNs with crystalline size of were grown on substrate. The shape of crystallite above had the hexagonal plate and column type. X-ray diffraction patterns for them correspond to those of the hexagonal wurtzite GaN. With increasing droplets. i.e, thickness of deposited layers, XRD intensity increased. PL (photoluminescence) spectrum consisted with an weak near band-edge emission at 3.45 eV and a broad donor-acceptor emission band at 3.32 eV. From the low temperature PL measurement on GaN grown at that the shallow donor-acceptor recombination induced emission was more intense than the near band-edge excitonic emission.

Keywords:GaN;GaOOH;precursor;spin coating

[References]

Akasaki J, J. Crystal Growth, 237-239, 905 (2002)
Ambacher O, J. Appl. Phys. D, 31, 2653 (1998)
Nakamura S, Fasol G, The Blue Laser Diode, Springer, Tokyo, 1997 (1997)
Li W, Li AZ, Qi M, Zhang YG, Zhao ZB, Yang QK, Mat. Sci. Eng. B, 75(2-3), 224 (2000)
Shinji F, Masashi M, Jpn. J. Appl, Phys. Part 1, 26(12), 2067 (1987)
Kernpisry P, Grzegory I, kowski M, Krukowski S, Phys. Stat. Solidi. A, 203(1), 131 (2006)
Nakamura S, Jpn. J. Appl. Phys., 30, L1705 (1991)
Kim ST, Lee YJ, Moon DC, Hong CH, Yoo TK, J. Crystal Growth, 194, 37 (1998)
Winter C, Kashammer J, Mittler- Neher S, Fisher RA, Optical Mat., 9(1-4), 352 (1998)
O'Brien P, Salacinski H, Motevalli M, J. Am. Chem. Soc., 119(51), 12695 (1997)
Puchinger M, Wagner T, Rodewald D, Bill J, Aldinger F, Lange FF, J. Cryst. Growth, 208(1-4), 153 (2000)
Koleske DD, Wickenden AE, Henry RL, Mat. Res. Soc. Symp. Proc., 595, W3.6 (1999)
Shin H, Arkun E, Thomson DB, Miraglia P, Preble E, Schlesser R, Wolter S, Sitar Z, Davis RF, J. Cryst. Growth, 236(4), 529 (2002)
Pisch A, Schmid-Fetzer R, J. Crystal Growth, 187(3-4), 329 (1998)
Sakai S, Kurai S, Nishino K, Wada K, Sato H, Naoi Y, Mat. Res. Soc. Symp. Proc., 449, 15 (1997)
Baranov PG, Mokhov EN, Ostroumov AO, Ramm MG, Ramm MS, Ratnikov VV, Roenkov AD, Vodakov YA, Wolfson AA, Saparin GV, Karpov SY, Zimina DV, Makarov YN, Holger Juergensen. MRSInternet J. NSR 3, article 50 (1998) (1998)
Klug HP, Alexander LE, X-ray Diffraction Procedures, John Wiley and Sons, New York, 1974, p. 531 (1974)
Fischer S, Steude G, Hofmann DM, Kurth F, Anders F, Topf M, Meyer BK, Bertram F, Schmidt M, Christen J, Eckey L, Holst J, Hoomann A, Mensching B, Rauschenbach B, J. Crystal Growth, 189-190, 556 (1998)
Kim ST, Lee YJ, Chung SH, Moon DC, Semi. Sci. Technol., 14(2), 156 (1999)
Mohammad SN, Botchkarev AE, Salvador A, Kim W, Aktas O, Morkoc H, Phil. Mag. B, 76(2), 131 (1997)

[1] Akasaki J, J. Crystal Growth, 237-239, 905 (2002)

[2] Ambacher O, J. Appl. Phys. D, 31, 2653 (1998)

[3] Nakamura S, Fasol G, The Blue Laser Diode, Springer, Tokyo, 1997 (1997)

[4] Li W, Li AZ, Qi M, Zhang YG, Zhao ZB, Yang QK, Mat. Sci. Eng. B, 75(2-3), 224 (2000)

[5] Shinji F, Masashi M, Jpn. J. Appl, Phys. Part 1, 26(12), 2067 (1987)

[6] Kernpisry P, Grzegory I, kowski M, Krukowski S, Phys. Stat. Solidi. A, 203(1), 131 (2006)

[7] Nakamura S, Jpn. J. Appl. Phys., 30, L1705 (1991)

[8] Kim ST, Lee YJ, Moon DC, Hong CH, Yoo TK, J. Crystal Growth, 194, 37 (1998)

[9] Winter C, Kashammer J, Mittler- Neher S, Fisher RA, Optical Mat., 9(1-4), 352 (1998)

[10] O'Brien P, Salacinski H, Motevalli M, J. Am. Chem. Soc., 119(51), 12695 (1997)

[11] Puchinger M, Wagner T, Rodewald D, Bill J, Aldinger F, Lange FF, J. Cryst. Growth, 208(1-4), 153 (2000)

[12] Koleske DD, Wickenden AE, Henry RL, Mat. Res. Soc. Symp. Proc., 595, W3.6 (1999)

[13] Shin H, Arkun E, Thomson DB, Miraglia P, Preble E, Schlesser R, Wolter S, Sitar Z, Davis RF, J. Cryst. Growth, 236(4), 529 (2002)

[14] Pisch A, Schmid-Fetzer R, J. Crystal Growth, 187(3-4), 329 (1998)

[15] Sakai S, Kurai S, Nishino K, Wada K, Sato H, Naoi Y, Mat. Res. Soc. Symp. Proc., 449, 15 (1997)

[16] Baranov PG, Mokhov EN, Ostroumov AO, Ramm MG, Ramm MS, Ratnikov VV, Roenkov AD, Vodakov YA, Wolfson AA, Saparin GV, Karpov SY, Zimina DV, Makarov YN, Holger Juergensen. MRSInternet J. NSR 3, article 50 (1998) (1998)

[17] Klug HP, Alexander LE, X-ray Diffraction Procedures, John Wiley and Sons, New York, 1974, p. 531 (1974)

[18] Fischer S, Steude G, Hofmann DM, Kurth F, Anders F, Topf M, Meyer BK, Bertram F, Schmidt M, Christen J, Eckey L, Holst J, Hoomann A, Mensching B, Rauschenbach B, J. Crystal Growth, 189-190, 556 (1998)

[19] Kim ST, Lee YJ, Chung SH, Moon DC, Semi. Sci. Technol., 14(2), 156 (1999)

[20] Mohammad SN, Botchkarev AE, Salvador A, Kim W, Aktas O, Morkoc H, Phil. Mag. B, 76(2), 131 (1997)