Al 박막의 힐록 형성에 미치는 Mo 하부층의 영향에 관한 실시간 분석

이용덕; 황수정; 이제훈; 주영창; 박영배; Yong-Duck Lee; Soo-Jung Hwang; Je-Hun Lee; Young-Chang Joo; Young-Bae Park

Korean Journal of Materials Research, Vol.17, No.1, 25-30, January, 2007

DOI10.3740/MRSK.2007.17.1.025 Export Citation

Al 박막의 힐록 형성에 미치는 Mo 하부층의 영향에 관한 실시간 분석

In-situ Analysis on the Effect of Mo Underlayer on Hillock Formation Behavior in Al Thin Films

이용덕, 황수정¹, 이제훈², 주영창¹, 박영배^†

안동대학교 신소재공학부
¹서울대학교 재료공학부
²㈜삼성전자 LCD 연구소

Yong-Duck Lee, Soo-Jung Hwang¹, Je-Hun Lee², Young-Chang Joo¹, and Young-Bae Park^{3, †}

School of Materials Science and Engineering, dong National University, ndong 760-749, Korea
¹School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
²LCD R&D Center, LCD Business, Samsung Electronics, Korea, Korea
³School of Materials Science and Engineering, Andong National University, Andong 760-749, Korea

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The in-situ scanning electron microscopy observation of real-time hillock evolution in pure hi thin films on glass substrate during Isothermal annealing was analyzed quantitatively to understand the compressive stress relaxation mechanism by focusing on the effect of Mo interlayer between Al film and glass substrate. There is a good correlation between the hillock-induced stress relaxation by in-situ scanning electron microscopy observation ana the measured stress relaxation by wafer curvature method. It is also clearly shown that the existence of Mo interlayer plays an important role in hillock formation probably due to the large difference in interfacial diffusivity of Al films.

Keywords:in-situ SEM;hillock;stress relaxation;Al thin film;Mo underlayer

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[1] Koike J, Utsunomiya S, Shimoyama Y, Maruyama K, Oikawa H, J. Mater. Res., 13, 3256 (1998)

[2] Legros M, Hemker KJ, Gouldstone A, Suresh S, Keller-Flaig RM, Arzt E, Acta Mater., 50, 3435 (2002)

[3] Gerth D, Katzer D, Krohn M, Thin Solid Films, 208, 67 (1992)

[4] Volkert CA, Alofs CF, Liefting JR, J. Mater. Res., 9(5), 1147 (1994)

[5] Chaudhari P, J. Appl, Phys., 45(10), 4339 (1974)

[6] Kim D, Heiland B, Nix WD, Arzt E, Deal MD, Plummer JD, Thin Solid Films, 371(1-2), 278 (2000)

[7] Iwamura E, Ohnishi T, Yoshikawa K, Thin Solid Films, 270(1-2), 450 (1995)

[8] Kim DK, Nix WD, Vinci RP, Deal MD, Plummer JD, J. Appl. Phys., 90(2), 781 (2001)

[9] Hwang SJ, Lee YD, Park YB, Lee JH, Jeong CO, Joo YC, Scrip. Mater., 54, 1841 (2006)