Cu/Ti(Ta)/NiSi 접촉의 열적안정성에 관한 연구

유정주; 배규식; Jung-Joo You; Kyoo-Sik Bae

Korean Journal of Materials Research, Vol.16, No.10, 614-618, October, 2006

DOI10.3740/MRSK.2006.16.10.614 Export Citation

Cu/Ti(Ta)/NiSi 접촉의 열적안정성에 관한 연구

A Study on the Thermal Stability of Cu/Ti(Ta)/NiSi Contacts

유정주, 배규식^†

수원대학교 전자재료공학과

Jung-Joo You, and Kyoo-Sik Bae^†

Department of Electronic Materials Engineering, The University of Suwon, Suwon, 445-743, Korea

E-mail:

The thermal stability of Cu/Ti(or Ta)/NiSi contacts was investigated. Ti(Ta)-capping layers deposited to form NiSi was utilized as the Cu diffusion barrier. Ti(Ta)/NiSi contacts was thermally stable upto . However when Cu/Ti(Ta)/NiSi contacts were furnace-annealed at for 40 min., the Cu diffusion was found to be effectively suppressed, but NiSi was dissociated and then Ni diffused into the Cu layer to form Cu-Ni solutions. On the other hand, the Ni diffusion did not occur for the Al/Ti/NiSi system. The thermal instability of Cu/Ti(Ta)/NiSi contacts was attributed to the high heat of solution of Ni in Cu.

Keywords:Cu/Ti(Ta)/NiSi Contact;Thermal Stability;Diffusion Barrier;Cu and Ni Diffusion

[References]

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Lauwers A, Kit JA, Van Dal MJH, Chamirian O, Pawlak MA, De Potter M, Lindsay R, Raymakers T, Pages X, Mebarki B, Mandrekar T, Maes K, Materials Science and Engineering B, 114-115, 29 (2004)
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O J, Lee C, Korean J. Mater. Res., 11(3), 215 (2001)
Hong S, Lee J, Korean J. Mater. Res., 12(11), 889 (2002)
Song S, Liu Y, Li M, Mao D, Chang C, Ling H, Microelectronic Engineering, 83, 423 (2006)
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Oda N, Ito S, Takewaki T, Kunishima H, Hironaga N, Honma I, Namba H, Yokogawa S, Goto T, Usami T, Ohto K, Kubo A, Aoki H, Suzuki M, Yamamoto Y, Watanabe S, Takeda T, Yamada K, Kosaka M, Horiuchi T, 2002 Symp. on VISI Tech., 34 (2002)
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[Referenced By]

[1] Fitz C, Goldbach M, Dupont A, Schmidbauer S, Microelectronic Engineering, 82, 460 (2005)

[2] Lauwers A, Kit JA, Van Dal MJH, Chamirian O, Pawlak MA, De Potter M, Lindsay R, Raymakers T, Pages X, Mebarki B, Mandrekar T, Maes K, Materials Science and Engineering B, 114-115, 29 (2004)

[3] Jung Y, Song O, Kim S, Choi Y, Kim C, Korean J. Mater. Res., 15(5), 301 (2005)

[4] Jiang H, Osburn CM, Smith P, Xiao ZG, Griffis D, McGuire G, Rozgonyi GA, J. Electrochem. Soc., 139(1), 196 (1992)

[5] O J, Lee C, Korean J. Mater. Res., 11(3), 215 (2001)

[6] Hong S, Lee J, Korean J. Mater. Res., 12(11), 889 (2002)

[7] Song S, Liu Y, Li M, Mao D, Chang C, Ling H, Microelectronic Engineering, 83, 423 (2006)

[8] Parikh S, Thin Solid Films, 320(1), 58 (1998)

[9] Oda N, Ito S, Takewaki T, Kunishima H, Hironaga N, Honma I, Namba H, Yokogawa S, Goto T, Usami T, Ohto K, Kubo A, Aoki H, Suzuki M, Yamamoto Y, Watanabe S, Takeda T, Yamada K, Kosaka M, Horiuchi T, 2002 Symp. on VISI Tech., 34 (2002)

[10] Nguyen NT, Boellaard E, Pham NP, Kutchoukov VG, Craciun G, Sarro PM, J. of Micromechanics and Microengineering, 12, 395 (2002)

[11] Choi JW, Hwang GH, Song JH, Kang SG, Korean J. Mater. Res., 15(11), 735 (2005)

[12] Wang SO, MRS Bulletin, 30 (1994)

[13] Shacham-Diamand Y, J. Electron. Mater., 30(4), 336 (2001)

[14] Yang WL, Fa WF, You HC, Ou KL, Lei TF, Chou CP, IEEE Trans. Electron Devices, ED-49(11), 1947 (2002)

[15] Wang CC, Lin HH, Chen MC, Jap. J. Appl. Phys., 43(9A), 5997 (2004)

[16] Park SJ, Lee KW, Kim JY, Jun HT, Bae KS, Korean J. Mater. Res., 13(7), 460 (2003)

[17] Lefakis H, Cain JF, Thin Solid Films, 101, 207 (1983)

[18] Lewis JE, Ho PS, J. Vac. Sci. Technol., 20(3), 466 (1982)

[19] Brandes EA, Brook GB, Smithells Metals Reference Handbook(7th ed.), p. 8-21, Butterwarth, London (1992) (1992)