Skutterudite CoSb3의 열전특성에 미치는 Sn의 충진효과

정재용; 어순철; 김일호; Jae-Yong Jung; Soon-Chul Ur; Il-Ho Kim

Korean Journal of Materials Research, Vol.16, No.9, 529-532, September, 2006

DOI10.3740/MRSK.2006.16.9.529 Export Citation

Skutterudite CoSb3의 열전특성에 미치는 Sn의 충진효과

Sn Filling Effects on the Thermoelectric Properties of CoSb3 Skutterudites

정재용, 어순철 , 김일호 ^†

충주대학교 신소재공학과/친환경 에너지 변환.저장소재 및 부품개발 연구센터

Jae-Yong Jung, Soon-Chul Ur , and Il-Ho Kim^†

Department of Materials Science and Engineering ReSEM, Chungju National University, 123 Geongdan-ri, Iryu-myeon, Chungju, Chungbuk, 330-702, Korea

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Sn-filled skutterudites were synthesized by the encapsulated induction melting process. Single was successfully obtained by subsequent annealing and confirmed by X-ray diffraction analysis. Temperature dependences of Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed the p-type conductivity of the Sn-filled . Electrical resistivity increased with increasing temperature, which shows that the Sn-filled skutterudite is a highly degenerate semiconductor. Thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. Thermoelectric figure of merit was enhanced by Sn filling and its optimum filling content was considered to be in the system.

Keywords:thermoelectric;skutterudite;CoSb3;void filling

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Takizawa H, Miura K, Ito M, Suzuki T, Endo T, J. Alloys & Comp., 282, 79 (1999)
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[Related Articles]

[1] Goldsmid HJ, CRC Handbook of Thermoelectrics, edited by Rowe DM (CRC Press,1995) p.19 (1995)

[2] Slack GA, ibid. in ref., 1, 407

[3] Venkatasubramanian R, Siivola E, Colpitts T, O'Quinn B, Nature, 413, 597 (2001)

[4] Slack GA, Tsoukala VG, J. Appl. Phys., 76, 1665 (1994)

[5] Dyck JS, Chen W, Uher C, Chen L, Tang X, Hirai T, J. Appl. Phys., 91, 3698 (2002)

[6] Puyet M, Lenoir B, Dauscher A, Weisbecker P, Clarke SJ, J. Sol. Stat. Chem., 177, 2138 (2004)

[7] Morelli DT, Meisner GP, Chen B, Hu S, Uher C, Phys. Rev. B, 56, 7376 (1997)

[8] Lamberton GA, J, Bhattacharya S, Littleton IV RT, Kaeser MA, Tedstrom RH, Tritt TM, Yang J, Nolas GS, Appl. Phys. Lett., 80, 598 (2002)

[9] Nolas GS, Cohn JL, Slack GA, Phys. Rev. B, 58, 164 (1998)

[10] Dilley NR, Bauer ED, Maple MB, Sales BC, J. Appl. Phys., 88, 1948 (2000)

[11] Nolas GS, Morelli DT, Tritt TM, Ann. Rev. Mater. Sci., 29, 89 (1999)

[12] You SW, Jung JY, Ur SC, Kim IH, Korean J. Mater. Res., 16(5), 312 (2006)

[13] Takizawa H, Miura K, Ito M, Suzuki T, Endo T, J. Alloys & Comp., 282, 79 (1999)

[14] Shi X, Zhang W, Chen LD, Yang J, Phys. Rev. Lett., 95, 185503 (2005)

[15] Sharp JW, Jones EC, Williams RK, Martin PM, Sales BC, J. Appl. Phys., 78, 1013 (1995)

[16] Morelli DT, Caillat T, Fleurial JP, Borshchevsky A, Vandersande J, Chen B, Uher C, Phys. Rev. B, 51, 9622 (1995)