태양전지용 ZnO:Al 투명전도막의 제작

탁성주; 강민구; 김동환; Sung Ju Tark; Min gu Kang; Donghwan Kim

Korean Journal of Materials Research, Vol.16, No.7, 449-454, July, 2006

DOI10.3740/MRSK.2006.16.7.449 Export Citation

태양전지용 ZnO:Al 투명전도막의 제작

Fabrication of Transparent and Conductive Al-doped ZnO Films for Solar Cells

탁성주, 강민구, 김동환 ^†

고려대학교 신소재공학과

Sung Ju Tark, Min gu Kang, and Donghwan Kim^†

Department of Materials Science and Engineering, Korea university, Seoul 136-701, Korea

E-mail:

Al-doped zinc oxide (ZnO:Al) films for transparent electrodes in thin film solar cells were deposited on glass substrates at a low temperature of by rf magnetron sputtering. The transmittance of the ZnO:Al films in the visible range was 87%. The lowest resistivity of the ZnO:Al films was about cm at the Al content of 2.5 wt%. After deposition, the surface of ZnO:Al films were etched in dilute HCl (0.5%) for the investigation of the change in the electrical properties and the surface morphology due to etching.

Keywords:Al-doped ZnO;rf magnetron sputter;TCO;surface textured

[References]

Springer J, Rech B, Reetz W, Muller J, Vanecek M, Sol. Energy Mater. Sol. Cells., 85, 1 (2005)
Yoo JB, Fahrenbruch AL, Bube RH, J. Appl. Phys., 68, 4694 (1990)
Jin ZC, Hamberg J, Granqvist CG, J. Appl. Phys., 64, 5117 (1988)
Chopra KL, Major S, Pandya DK, Thin Solid Films, 102, 1 (1983)
Lan WS, Fonash SJ, J. Electron Mater., 16, 141 (1987)
Hong RJ, Jiang X, Sittinger V, Szyszka B, Hoing T, Brauer G, Heide G, Frischat GH, J. Vac. Sci. Technol. A, 20(3), 900 (2002)
Yamada A, Wenas WW, Yoshino M, Jpn. J. Appl. Phys., 30, L1152 (1991)
Mizuhashi M, Goto Y, Adachi K, Jpn J Appl Phys., 27, 2053 (1988)
Lan WS, Fonash SJ, J. Electron. Mater., 16, 141 (1987)
Srikant V, Clarke DR, J. of Appl. physics, 81(9), 6357 (1997)
Burstein E, Phys. Rev., 93, 632 (1954)
Moss TS, Proc. R. Soc. London. Ser. B, 67, 775 (1954)
Ohta H, Hosono H, Materials Today, 7, 42 (2004)
Aita CR, Purdes AJ, Lad RJ, Funkenbusch PD, J. Appl. Phys., 51, 5533 (1980)
Tu BS, Kim ES, Too SW, Lee JH, J. Kor. Ceram. Soc., 32, 799 (1996)
Barens JO, Leary DJ, Jordan AG, J. Electrochem. Soc., 7, 1636 (1980)
Ellmer K, Cebulla R, Wendt R, Thin Solid Films, 317(1-2), 413 (1998)
Kluth O, Rech B, Houben L, Wieder S, Schope G, Beneking C, Wagner H, Loffl A, Schock HW, Thin Solid Films, 351(1-2), 247 (1999)
Anna JA, Selven, Keppner K, Shan A, Mater. Res. Soc. Smp. Proc., 426, 497 (1997)

[Referenced By]

[Related Articles]

[1] Springer J, Rech B, Reetz W, Muller J, Vanecek M, Sol. Energy Mater. Sol. Cells., 85, 1 (2005)

[2] Yoo JB, Fahrenbruch AL, Bube RH, J. Appl. Phys., 68, 4694 (1990)

[3] Jin ZC, Hamberg J, Granqvist CG, J. Appl. Phys., 64, 5117 (1988)

[4] Chopra KL, Major S, Pandya DK, Thin Solid Films, 102, 1 (1983)

[5] Lan WS, Fonash SJ, J. Electron Mater., 16, 141 (1987)

[6] Hong RJ, Jiang X, Sittinger V, Szyszka B, Hoing T, Brauer G, Heide G, Frischat GH, J. Vac. Sci. Technol. A, 20(3), 900 (2002)

[7] Yamada A, Wenas WW, Yoshino M, Jpn. J. Appl. Phys., 30, L1152 (1991)

[8] Mizuhashi M, Goto Y, Adachi K, Jpn J Appl Phys., 27, 2053 (1988)

[9] Lan WS, Fonash SJ, J. Electron. Mater., 16, 141 (1987)

[10] Srikant V, Clarke DR, J. of Appl. physics, 81(9), 6357 (1997)

[11] Burstein E, Phys. Rev., 93, 632 (1954)

[12] Moss TS, Proc. R. Soc. London. Ser. B, 67, 775 (1954)

[13] Ohta H, Hosono H, Materials Today, 7, 42 (2004)

[14] Aita CR, Purdes AJ, Lad RJ, Funkenbusch PD, J. Appl. Phys., 51, 5533 (1980)

[15] Tu BS, Kim ES, Too SW, Lee JH, J. Kor. Ceram. Soc., 32, 799 (1996)

[16] Barens JO, Leary DJ, Jordan AG, J. Electrochem. Soc., 7, 1636 (1980)

[17] Ellmer K, Cebulla R, Wendt R, Thin Solid Films, 317(1-2), 413 (1998)

[18] Kluth O, Rech B, Houben L, Wieder S, Schope G, Beneking C, Wagner H, Loffl A, Schock HW, Thin Solid Films, 351(1-2), 247 (1999)

[19] Anna JA, Selven, Keppner K, Shan A, Mater. Res. Soc. Smp. Proc., 426, 497 (1997)