저에너지의 Ar 중성빔을 이용한 Silicon의 Atomic Layer Etching

오창권; 박상덕; 염근영; Changkwon Oh; Sangduk Park; Geunyoung Yeom

Korean Journal of Materials Research, Vol.16, No.4, 213-217, April, 2006

DOI10.3740/MRSK.2006.16.4.213 Export Citation

저에너지의 Ar 중성빔을 이용한 Silicon의 Atomic Layer Etching

Atomic Layer Etching of Silicon Using a Ar Neutral Beam of Low Energy

오창권, 박상덕, 염근영^{1, †}

성균관대학교 공과대학 신소재공학과
¹테라급 나노소자 개발 사업단

Changkwon Oh, Sangduk Park, and Geunyoung Yeom^{1, †}

Department of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746 Korea
¹The National Program for Tera-Lavel Nanodevice, Hawolgok-dong, Sungbuk-ku, Seoul, 136-791, Korea

E-mail:

In this study, atomic layer etching of Si has been carried out using Cl 2 adsorption followed by the irradiation Ar neutral beam of low energy. In this experiment, the etch rate of Si was dependent on the Cl 2 pressure(the surface coverage of chlorine) and the irradiation time of Ar neutral beam(the flux density of Ar neural beam). And the etch rate of Si(100) and Si(111) were saturated exactly at one monolayer per cycle with 1.36\AA/cycleand1.57\AA/cycle , respectively.

Keywords:atomic layer etching (ALET);silicon;neutral beam;chlorine

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