Dewetting된 Pt Islands를 Etch Mask로 사용한 GaN 나노구조 제작

김택승; 이지민; Taek-Seung Kim; Ji-Myon Lee

Korean Journal of Materials Research, Vol.16, No.3, 151-156, March, 2006

DOI10.3740/MRSK.2006.16.3.151 Export Citation

Dewetting된 Pt Islands를 Etch Mask로 사용한 GaN 나노구조 제작

Fabrication of Nanostructures by Dry Etching Using Dewetted Pt Islands as Etch-masks

김택승, 이지민^†

순천대학교 재료금속공학과

Taek-Seung Kim, and Ji-Myon Lee^†

Department of Materials Science and Metallurgical Engineering, Sunchon National University, Korea

E-mail:

A method for fabrication of nano-scale GaN structure by inductively coupled plasma etching is proposed, exploiting a thermal dewetting of Pt thin film as an etch mask. The nano-scale Pt metal islands were formed by the dewetting of 2-dimensional film on SiO 2 dielectric materials during rapid thermal annealing process. For the case of 30 nm thick Pt films, pattern formation and dewetting was initiated at temperatures greater 600 ? C . Controlling the annealing temperature and time as well as the thickness of the Pt metal film affected the size and density of Pt islands. The activation energy for the formation of Pt metal island was calculated to be 23.2 KJ/mole. The islands show good resistance to dry etching by a CF 4 based plasma for dielectric etching indicating that the metal islands produced by dewetting are suitable for use as an etch mask in the fabrication of nano-scale structures.

Keywords:Nanostructure;dewetting;thermal annealing;Pt;GaN

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[1] Scherer A, Van der Gaag BP, Proc. SPIE, 1284, 149 (1990)

[2] Iwabuchi T, Chung C, Khitrova G, Warren ME, Chavez-Pirson A, Gibbs HM, Sarid D, Gallagher M, Proc. SPIE, 1284, 142 (1990)

[3] Maximov I, Gustafsson A, Hansson HC, Samuelson L, Seifert W, Wiedesohler A, J. Vac. Sci. Technol. A, 11, 748 (1993)

[4] Bischof J, Scherer D, Herminghaus S, Leiderer P, Phys. Rev. Lett., 77, 1536 (1996)

[5] Hu X, Cahill DG, Averback RS, Appl. Phys. Lett., 15, 3215 (2000)

[6] Srolovitz DJ, Goldiner MG, J. Min. Met. Mater., 47, 31 (1995)

[7] Herminghaus S, Jacobs K, Mecke K, Bischof J, Fery A, Ibn-Elhaj M, Schlagowski S, Science, 282(5390), 916 (1998)

[8] Brandes EA, Brook GB, Smithells Metals Reference Book, 7th ed.(Butterworth-Henemann, Oxford, 1992), p,14-8 (1992)

[9] Park S, Schift H, Padeste C, Schnyder B, Kotz R, Gobrecht J, Microelectron. Eng., 73-74, 196 (2004)

[10] Hu X, Cahill DG, Averback RS, J. Appl. Phys., 89, 7777 (2001)

[11] Lee JM, Chang KM, Lee IH, Park SJ, J. Electrochem. Soc., 147(5), 1859 (2000)

[12] Lee JM, Kim SW, Park SJ, J. Electrochem. Soc., 148(5), G254 (2001)