반응성 스퍼터링법으로 증착된 CoN x 중간층을 이용한 (100)Si 기판 위에서의 에피택셜 CoSi 2 성장 연구 ㅇ

이승렬; 김선일; 안병태; Seung Ryul Lee; Sun Il Kim; Byung Tae Ahn

Korean Journal of Materials Research, Vol.16, No.1, 30-36, January, 2006

DOI10.3740/MRSK.2006.16.1.030 Export Citation

반응성 스퍼터링법으로 증착된 CoN x 중간층을 이용한 (100)Si 기판 위에서의 에피택셜 CoSi 2 성장 연구 ㅇ

Epitaxial Growth of CoSi 2 Layer on (100)Si Substrate using CoN x Interlayer deposited by Reactive Sputtering

이승렬, 김선일, 안병태^†

한국과학기술원 신소재공학과

Seung Ryul Lee, Sun Il Kim, and Byung Tae Ahn^†

Department of Materials and Engineering, Korea Advanced Institute of Sceince and Technology, Korea

E-mail:

A novel method was proposed to grow an epitaxial [Math Processing Error] on (100)Si substrate. A [Math Processing Error] interlayer was deposited by reactive sputtering of Co in an Ar+ [Math Processing Error] flow. From the Ti/Co/ [Math Processing Error] /Si structure, a uniform and thin [Math Processing Error] layer was epitaxially grown on (100)Si by annealing above [Math Processing Error] . Two amorphous layers were found at the [Math Processing Error] /Si interface, where the top layer has a silicon nitride (Si-N) bonding state with some Co content and the bottom layer has a Co-Si intermixing state. The SiNx amorphous layer seems to play a critical role of suppressing the diffusion of Co into Si substrate for the direct formation of epitaxial [Math Processing Error] .

Keywords:Epitaxial [Math Processing Error];Reactive Sputtering;[Math Processing Error] interlayer;SiNx interface layer

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JCPDS 41-0943
JCPDS 06-0691
Ruterana P, Houdy P, Boher P, J. Appl. Phys., 68, 1033 (1990)

[1] Bulle Lieuwma CWT, Van Ommen AH, Homstra J, Aussems NAM, J. Appl. Phys., 71, 2211 (1992)

[2] Tung RT, Schrey F, Appl. Phys. Lett., 54, 852 (1989)

[3] Chapman AR, Wei CC, Bell DA, Aur S, Brown GA, Haken RA, IEDM Tech. Dig., 489 (1991)

[4] Jimenez JR, Hsiung LM, Rajan K, Schowalter LJ, Hashimoto S, Thomson RD, Iyer SS, Appl. Phys. Lett., 57, 2811 (1990)

[5] Rajan K, Hsiung LM, Jimenez JR, Schowalter LJ, Ramanathan KV, Thomson RD, Iyer SS, J. Appl. Phys., 70, 4853 (1991)

[6] Tung RT, Mater. Chem. Phys., 32, 107 (1992)

[7] White AE, Short KT, Dynes RC, Garno JP, Gibson JM, Appl. Phys. Lett, 50, 95 (1987)

[8] Dass MLA, Fraser DB, Wei CS, Appl. Phys. Lett., 58, 1308 (1991)

[9] Tung RT, Appl. Phys. Lett., 68, 3461 (1996)

[10] Rhee HS, Jang TW, Ahn BT, Appl. Phys. Lett., 74, 1003 (1999)

[11] Rhee HS, Ahn BT, Appl. Phys. Lett., 74, 3176 (1999)

[12] JCPDS 41-0943

[13] JCPDS 06-0691

[14] Ruterana P, Houdy P, Boher P, J. Appl. Phys., 68, 1033 (1990)