RF 마그네트론 스퍼터링법에 의한 Y 3 Al 5 O 12 :Ce 형광체 박막의 성장 거동 및 발광 특성

김주원; 김영진; Joo Won Kim; Young Jin Kim

Korean Journal of Materials Research, Vol.15, No.8, 548-553, August, 2005

DOI10.3740/MRSK.2005.15.8.548 Export Citation

RF 마그네트론 스퍼터링법에 의한 Y 3 Al 5 O 12 :Ce 형광체 박막의 성장 거동 및 발광 특성

Growing Behavior and Luminescent Properties of Y 3 Al 5 O 12 :Ce Phosphor Thin Films grown by rf Magnetron Sputtering

김주원, 김영진 ^†

경기대학교 재료공학과

Joo Won Kim, and Young Jin Kim^†

Department of Materials Science and Engineering, Kyonggi University, Suwon, 443-760, Korea

E-mail:

Trivalent cerium (Ce 3+ ) activated YAG (yttrium aluminum garnet, Y 3 Al 5 O 12 ) ) thin films phosphor were deposited on quartz glass substrates by rf magnetron sputtering. The effects of sputtering parameters, annealing atmosphere, and substrates on growing behaviors and luminescent properties were investigated. The sputtering parameters were O 2 /(Ar+O 2 ) gas ratio, rf power, and deposition time. XRD (X-ray diffractometery) spectra exhibited that as-deposited films were amorphous, while they were transformed to the crystalline phases by post-annealing. The crystallinity and the atomic ratio strongly depended on the sputtering gas ratio O 2 /(Ar+O 2 ) . High quality YAG:Ce thin films could be obtained at the gas ratio of 50% oxygen. After annealing process, PL (Photoluminescence) spectra excited at 450nm showed a yellow single band at 550nm. The films deposited at the sputtering gas ratio of 50% oxygen exhibited the highest PL intensity.

Keywords:YAG;white LED;phosphor;thin film;photoluminescence

[References]

Narukawa Y, Saijou S, Kawakami Y, Fujita S, Mukai T, Nakamura S, Appl. Phys. Lett., 74(4), 558 (1999)
Srivastava AM, Comanzo HA, McNulty TF, USA Patent No.6621211 B1 (2003) (2003)
Zhou Y, Lin J, Yu M, Wang S, Zhang H, Mat. Lett., 56, 628 (2002)
Pan Y, Wu M, Su Q, Mat. Sci. Eng. B, 106(3), 251 (2004)
Rodriguez-Rojas RA, De la Rosa-Cruz E, Diaz-Tores LA, Salas P, Melendrez R, Barboza-Flores M, Meneses-Nava MA, Barbosa-Garciz O, Opt. Mat., 25(3), 285 (2004)
Pan Y, Wu M, Su Q, J. Phys. Chem. Solids, 65(5), 845 (2004)
Hamerich A, Wunderlich R, Muller J, J. Vac. Sci. Technol. A, 12(5), 2873 (1994)
Grace JM, McDonald DB, Reiten MT, Olson J, Kampwirth RT, Gray KE, J. Vac. Sci. Technol. A, 10(4), 1600 (1992)
Lounsbury JB, J. Vac. Sci. Technol., 6(5), 838 (1969)
Schiller S, Heisig U, Goedicke K, Thin Solid Films, 40, 327 (1977)
Del Rosario G, Ohara S, Mancic L, Milosevic O, Appl. Surf. Sci., 238(1-4), 469 (2004)

[Related Articles]

[1] Narukawa Y, Saijou S, Kawakami Y, Fujita S, Mukai T, Nakamura S, Appl. Phys. Lett., 74(4), 558 (1999)

[2] Srivastava AM, Comanzo HA, McNulty TF, USA Patent No.6621211 B1 (2003) (2003)

[3] Zhou Y, Lin J, Yu M, Wang S, Zhang H, Mat. Lett., 56, 628 (2002)

[4] Pan Y, Wu M, Su Q, Mat. Sci. Eng. B, 106(3), 251 (2004)

[5] Rodriguez-Rojas RA, De la Rosa-Cruz E, Diaz-Tores LA, Salas P, Melendrez R, Barboza-Flores M, Meneses-Nava MA, Barbosa-Garciz O, Opt. Mat., 25(3), 285 (2004)

[6] Pan Y, Wu M, Su Q, J. Phys. Chem. Solids, 65(5), 845 (2004)

[7] Hamerich A, Wunderlich R, Muller J, J. Vac. Sci. Technol. A, 12(5), 2873 (1994)

[8] Grace JM, McDonald DB, Reiten MT, Olson J, Kampwirth RT, Gray KE, J. Vac. Sci. Technol. A, 10(4), 1600 (1992)

[9] Lounsbury JB, J. Vac. Sci. Technol., 6(5), 838 (1969)

[10] Schiller S, Heisig U, Goedicke K, Thin Solid Films, 40, 327 (1977)

[11] Del Rosario G, Ohara S, Mancic L, Milosevic O, Appl. Surf. Sci., 238(1-4), 469 (2004)