Cu-CMP에서 Alanine이 Cu와 TaN의 선택비에 미치는 영향

박진형; 김민석; 백운규; 박재근; Jin-Hyung Park; Min-Seok Kim; Ungyu Paik; Jea-Gun Park

Korean Journal of Materials Research, Vol.15, No.6, 426-430, June, 2005

DOI10.3740/MRSK.2005.15.6.426 Export Citation

Cu-CMP에서 Alanine이 Cu와 TaN의 선택비에 미치는 영향

Effect of Alanine on Cu/TaN Selectivity in Cu-CMP

박진형, 김민석, 백운규 ¹, 박재근^†

한양대학교 Nano-SOI 공정 연구실
¹한양대학교 세라믹공학과

Jin-Hyung Park, Min-Seok Kim, Ungyu Paik¹, and Jea-Gun Park^†

Nano-SOI Process Laboratory, Hanyang University, Korea
¹Department of Ceramic Engineering, Hanyang University, Korea

E-mail:

Chemical mechanical polishing (CMP) is an essential process in the production of integrated circuits containing copper interconnects. The effect of alanine in reactive slurries representative of those that might be used in copper CMP was studied with the aim of improving selectivity between copper(Cu) film and tantalum-nitride(TaN) film. We investigated the pH effect of nano-colloidal silica slurry containing alanine through the chemical mechanical polishing test for the 8(inch) blanket wafers as deposited Cu and TaN film, respectively. The copper and tantalum-nitride removal rate decreased with the increase of pH and reaches the neutral at pH 7, then, with the further increase of pH to alkaline, the removal rate rise to increase soddenly. It was found that alkaline slurry has a higher removal rate than acidic and neutral slurries for copper film, but the removal rate of tantalum-nitride does not change much. These tests indicated that alanine may improve the CMP process by controlling the selectivity between Cu and TaN film.

Keywords:Copper CMP;Alanine;Colloidal silica slurry;Slurry pH;Selectivity

[References]

Park JG, Monthly Semiconductor, 182, p.76, Electronic Sources International Inc., Seoul, Korea, (2003) (2003)
Landis H, Burke P, Cote W, Hill W, Hoffman C, Kaanta C, Koburger C, Lange W, Leach M, Luce S, Thin Solid Films, 1, 220 (1992)
Murarka SE, Steigerwald J, Gutmann RJ, MRS Bulletin, 1, 46 (1993)
Steigerwald JM, Zirpoli R, Murarka SP, Price D, Gutmann RJ, J. Electrochem. Soc., 141(10), 2842 (1994)
Gutmann RJ, Steigerwald JM, You L, Price DT, Neirynck J, Duquette DJ, Murarka SP, Thin Solid Films, 270(1-2), 596 (1995)
Steigerwald JM, Duquette DJ, Murarka SP, Gutmann RJ, J. Electrochem. Soc., 142(7), 2379 (1995)
Luo Q, Campbell DR, Babu SV, CMP-MIC Conference (Feb. 1996) p.145 (1996)
Carpio R, Farkas J, Jairath R, Thin Solid Films, 266, 238 (1998)
Hu CK, Luther B, Kaufman FB, Hummel J, Uzoh C, Pearson DJ, Thin Solid Films, 262(1-2), 84 (1995)
Du T, Desai V, J. Mater. Sci. Lett., 22(22), 1623 (2003)

[Related Articles]

[1] Park JG, Monthly Semiconductor, 182, p.76, Electronic Sources International Inc., Seoul, Korea, (2003) (2003)

[2] Landis H, Burke P, Cote W, Hill W, Hoffman C, Kaanta C, Koburger C, Lange W, Leach M, Luce S, Thin Solid Films, 1, 220 (1992)

[3] Murarka SE, Steigerwald J, Gutmann RJ, MRS Bulletin, 1, 46 (1993)

[4] Steigerwald JM, Zirpoli R, Murarka SP, Price D, Gutmann RJ, J. Electrochem. Soc., 141(10), 2842 (1994)

[5] Gutmann RJ, Steigerwald JM, You L, Price DT, Neirynck J, Duquette DJ, Murarka SP, Thin Solid Films, 270(1-2), 596 (1995)

[6] Steigerwald JM, Duquette DJ, Murarka SP, Gutmann RJ, J. Electrochem. Soc., 142(7), 2379 (1995)

[7] Luo Q, Campbell DR, Babu SV, CMP-MIC Conference (Feb. 1996) p.145 (1996)

[8] Carpio R, Farkas J, Jairath R, Thin Solid Films, 266, 238 (1998)

[9] Hu CK, Luther B, Kaufman FB, Hummel J, Uzoh C, Pearson DJ, Thin Solid Films, 262(1-2), 84 (1995)

[10] Du T, Desai V, J. Mater. Sci. Lett., 22(22), 1623 (2003)