화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Materials Research, Vol.15, No.5, 301-305, May, 2005
DOI10.3740/MRSK.2005.15.5.301  Export Citation
게이트를 상정한 니켈 실리사이드 박막의 물성과 미세구조 변화
Property and Microstructure Evolution of Nickel Silicides for Poly-silicon Gates
정영순†, 송오성, 김상엽, 최용윤1, 김종준1
  • 서울시립대학교 신소재공학과
  • 1서울대학교 반도체공동연구소
Youngsoon Jung†, Ohsung Song, Sangyoeb Kim, Yongyun Choi1, and Chongjun Kim1
  • Department of Materials Science and Engineering, University of Seoul, Korea
  • 1Inter-university Semiconductor Research Center, Seoul National University, Korea
E-mail:
We fabricated nickel silicide layers on whole non-patterned wafers from [Math Processing Error] /poly-Si(70 nm)mn(40 nm) structure by 40 sec rapid thermal annealing of [Math Processing Error] . The sheet resistance, cross-sectional microstructure, surface roughness, and phase analysis were investigated by a four point probe, a field emission scanning electron microscope, a scanning probe microscope, and an X-ray diffractometer, respectively. Sheet resistance was as small as [Math Processing Error] . even at the elevated temperature of [Math Processing Error] . The silicide thickness and surface roughness increased as silicidation temperature increased. We confirmed the nickel silicides iron thin nickel/poly-silicon structures would be a mixture of NiSi and [Math Processing Error] even at the [Math Processing Error] stable temperature region.
Keywords:nickel mono silicide;gate silicide;silicides;salicide;gate oxide
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