화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Materials Research, Vol.15, No.5, 323-333, May, 2005
DOI10.3740/MRSK.2005.15.5.323  Export Citation
기상휘발법에 의한 이산화규소 나노와이어의 성장에 미치는 가스의 영향
Effect of Ambient Gas to Growth of SiO 2 Nanowires by Vapor Evaporation Method
노대호, 김재수1, †, 변동진, 이재훈2, 양재웅3, 김나리
  • 고려대학교 재료공학과
  • 1한국과학기술연구원 금속공정연구센터
  • 2생산기술연구원 신소재본부
  • 3대진대학교 신소재공학과
Rho Dae-Ho, Kim Jae-Soo1, †, Byun Dong-Jin2, Lee Jae-Hoon3, Yang Jae-Woong4, and Kim Na-Ri2
  • epartment of Materials Science and Engineering, Korea University, Korea
  • 1Korea Institute of Science & Technology, Advanced Materials Center, Korea
  • 2Department of Materials Science and Engineering, Korea University, Korea
  • 3Advanced Materials Center, Korea Institute of Industrial Technology, Korea
  • 4Department of Advanced Materials Science and Techology, Dajin University, Korea
E-mail:
Effects of gases to growth of [Math Processing Error] nanowires were characterized. [Math Processing Error] , Ar, and [Math Processing Error] gas's effect were determined. [Math Processing Error] nanowires growth scheme was varied by kind and flow rates of gases because of amounts of [Math Processing Error] . Flow rates of gases and kind of substrates affected nanowires' diameters, lengths and morphologies of grown nano wires. With increasing flow rates of gases, nanowire's diameter increased because of additional VS and SLS reactions. By TEM characterization, We knows that, grown [Math Processing Error] nanowires on Si substrate showed two shell structures. These shapes of nanowires were formed by reaction of additional SLS growth. Grown [Math Processing Error] nanowires showed blue luminescence by PL characterization These Blue luminescence was due to quantum confinement effect and oxygen vacancies in the nanowires.
Keywords:nanowire;ambient gas
  1. Rho DH, Kim JS, Byun DJ, Lee JH, Yang JW, Kim NR, Cho SI, Korean J. Mater. Res., 14(7), 482 (2004)
  2. Wang ZL, Gao RPP, Gole JL, Stout JD, Adv. Mater., 12(24), 1938 (2000)
  3. Tirchnska TV, Rodriquez MM, Hemadez AV, Cheah KW, J. Luminescence, 102, 551 (2003)
  4. Tirchnska TV, Rodriquez MM, Khomenkova LY, Surface Science, 532, 1204 (2003)
  5. Yu DP, Hong QL, Ding Y, Zhang HZ, Bai ZG, Wang JJ, Zou YH, Qian W, Xiong GG, Feng SQ, Appl. Phys. Lett., 73, 3076 (1988)
  6. Wu XC, Song WH, Wang KY, Hu T, Zhao B, Sun YP, Du JJ, Chem. Phys. Lett., 336(1), 53 (2001)
  7. Rho DH, Kim JS, Byun DJ, Yang JW, Kim NR, Korean J. Mater. Res., 13(6), 404 (2003)
  8. Takikawa H, Yatsuki M, Sakakibara T, Jpn. J. Appl. Phys., 38, L401 (1999)
  9. Pan ZW, Dai ZR, Ma C, Wang ZL, J. Am. Chem. Soc., 124(8), 1817 (2002)
  10. Givargizov EI, J. Cryst. Gr., 31, 20 (1975)
  11. Dai Y, Zhang Y, Bai YQ, Wang ZL, Chem. Phys. Lett., 375(1-2), 96 (2003)
  12. Chen XY, An CH, Liu JW, Wang X, Qian YT, J. Cryst. Growth, 253(1-4), 357 (2003)
  13. Nutt SR, J. Am. Ceram. Soc., 71, 149 (1988)
  14. Knowels KM, Ravichandran MV, J. Am. Ceram. Soc., 80, 1165 (1997)
  15. Yao Y, Lee ST, Li FH, Chem. Phys. Lett., 381(5-6), 628 (2003)
  16. Hu QL, Li GQ, Suzuki H, Araki H, Ishikawa N, Yang W, Noda T, J. Cryst. Growth, 246(1-2), 64 (2002)
  17. Satishkimar BC, Tomas PJ, Govindaraj A, Rao CNR, Appl. Phys. Lett., 77, 2530 (2000)
  18. Rho DH, Kim JS, Byun DJ, Yang JW, Kim NR, Korean J. Mater. Res., 13(10), 677 (2003)
  19. Wu JJ, Wong TC, Yu CC, Adv. Mater., 14(22), 1643 (2002)
  20. Ma DDD, Lee CS, Au FCK, Tong SY, Lee SY, Science, 299, 1874 (2003)
  21. Teo BK, Li CP, Sun XH, Wong NB, Lee ST, Inorg. Chem., 42(21), 6723 (2003)
  22. Nishikawa H, Shrioyama T, Nakamura R, Ohiki Y, Nagaswa K, Hama Y, Phys. Rev. B, 45, 586 (1992)
  23. Niu J, Sha J, Zhang N, Ji Y, Ma X, Yang D, Physica E, 23, 1 (2004)