GaOOH로부터 GaN 분말 형성의 반응역학에 관하여

이재범; 김선태; Jaebum Lee; Seontai Kim

Korean Journal of Materials Research, Vol.15, No.5, 348-352, May, 2005

DOI10.3740/MRSK.2005.15.5.348 Export Citation

GaOOH로부터 GaN 분말 형성의 반응역학에 관하여

On the Reaction Kinetics of GaN Particles Formation from GaOOH

이재범, 김선태^†

한밭대학교 신소재공학부

Jaebum Lee, and Seontai Kim^†

Department of Materials Science & Engineering, Hanbat National University, Daejeon 305-719, Korea

E-mail:

Gallium oxyhydroxide (GaOOH) powders were heat-treated in a flowing ammonia gas to form GaN, and the reaction kinetics of the oxide to nitride was quantitatively determined by X-ray diffraction analysis. GaOOH turned into intermediate mixed phases of α?andβ?Ga 2 O 3 , and then single phase of GaN. The reaction time for full conversion (t c ) decreased as the temperature increased. There were two-types of rapid reaction processes with the reaction temperature in the initial stage of nitridation at below t c , and a relatively slow processes followed over t c does not depends on temperatures. The nitridation process was found to be limited by the rate of an interfacial reaction with the reaction order n value of 1 at 800 ? C and by the diffusion-limited reaction with the n of 2 at above 1000 ? C , respectively, at below t c . The activation energy for the reaction was calculated to be 1.84 eV in the temperature of below 830 ? C , and decreased to 0.38 eV above 830 ? C . From the comparative analysis of data, it strongly suggest the rate-controlling step changed from chemical reaction to mass transport above 830 ? C .

Keywords:GaOOH;gallium hydroxide;GaN;powder;reaction mechanism

[References]

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Contreras O, Srinivasan S, Ponce FA, Hirata GA, Ramos F, McKittrick J, Appl. Phys. Lett, 81, 1993 (2002)
Hong J, Lee JW, MacKenzie JD, Donovan SM, Abernathy CR, Pearton SJ, Zolper JC, Semicond. Sci. Technol., 12, 1310 (1997)
Shin H, Thomson DB, Schlesser R, Davis RF, Sitar Z, J. Cryst. Growth, 241(4), 404 (2002)
Kumar MS, Ramasamy P, Kumar J, J. Cryst. Growth, 211(1-4), 184 (2000)
Hara K, Matsuno Y, Matsuo Y, Jpn. J. Appl. Phys., 40, L242 (2001)
Balkas CM, Davis RF, J. Am ceram. Soc., 79, 2309 (1996)
Jung WS, Mat. Lett., 57, 110 (2002)
Cho S, Lee J, Park IY, Kim S, Jpn. J. Appl. Phys., 41, 5533 (2002)
Jung WS, Min BK, Mater. Lett., 58, 3058 (2004)
Klug HP, Alexander LE, X-ray Diffraction Procedures, (John Wiley and Sons, New York, 1974) p. 531 (1974)
Roy R, Hill VG, Osborn EF, J. Am. Chem. Soc., 74, 719 (1952)
Burke J, The Kinetics of Phase Transformation in Metals, (Pergamon, Oxford, 1965) p. 192 (192)
Chang A, Rhee SW, Baik S, J. Am Ceram. Soc., 78, 33 (1995)
Murali AK, Barve AD, Risbud SH, Mater. Sci. Eng. B, 96, 111 (2002)
Wolter SD, Mohney SE, Venugopalan H, Wickenden AE, Koleske DD, J. Electrochem. Soc., 145(2), 629 (1998)
Moulson AJ, J. Mater. Sci., 14, 1017 (1979)
Cullity BD, Elements of X-ray Diffraction, Addison-Wesley, Reading, MA, 102 (1978) (1978)
Robey A, Boufaden T, Jani BE, J. Crystal Growth, 203, 12 (1999)

[Referenced By]

[1] Monemar B, J. Mater. Sci., 10, 227 (1999)

[2] Contreras O, Srinivasan S, Ponce FA, Hirata GA, Ramos F, McKittrick J, Appl. Phys. Lett, 81, 1993 (2002)

[3] Hong J, Lee JW, MacKenzie JD, Donovan SM, Abernathy CR, Pearton SJ, Zolper JC, Semicond. Sci. Technol., 12, 1310 (1997)

[4] Shin H, Thomson DB, Schlesser R, Davis RF, Sitar Z, J. Cryst. Growth, 241(4), 404 (2002)

[5] Kumar MS, Ramasamy P, Kumar J, J. Cryst. Growth, 211(1-4), 184 (2000)

[6] Hara K, Matsuno Y, Matsuo Y, Jpn. J. Appl. Phys., 40, L242 (2001)

[7] Balkas CM, Davis RF, J. Am ceram. Soc., 79, 2309 (1996)

[8] Jung WS, Mat. Lett., 57, 110 (2002)

[9] Cho S, Lee J, Park IY, Kim S, Jpn. J. Appl. Phys., 41, 5533 (2002)

[10] Jung WS, Min BK, Mater. Lett., 58, 3058 (2004)

[11] Klug HP, Alexander LE, X-ray Diffraction Procedures, (John Wiley and Sons, New York, 1974) p. 531 (1974)

[12] Roy R, Hill VG, Osborn EF, J. Am. Chem. Soc., 74, 719 (1952)

[13] Burke J, The Kinetics of Phase Transformation in Metals, (Pergamon, Oxford, 1965) p. 192 (192)

[14] Chang A, Rhee SW, Baik S, J. Am Ceram. Soc., 78, 33 (1995)

[15] Murali AK, Barve AD, Risbud SH, Mater. Sci. Eng. B, 96, 111 (2002)

[16] Wolter SD, Mohney SE, Venugopalan H, Wickenden AE, Koleske DD, J. Electrochem. Soc., 145(2), 629 (1998)

[17] Moulson AJ, J. Mater. Sci., 14, 1017 (1979)

[18] Cullity BD, Elements of X-ray Diffraction, Addison-Wesley, Reading, MA, 102 (1978) (1978)

[19] Robey A, Boufaden T, Jani BE, J. Crystal Growth, 203, 12 (1999)