유도용해법으로 제조된 Co1-xNbxSb3의 열전특성

박종범; 유신욱; 조경원; 장경욱; 이정일; 어순철; 김일호; J.B. Park; S.W. You; K.W. Cho; K.W. Jang; J.I. Lee; S.C. Ur; I.H. Kim

Korean Journal of Materials Research, Vol.15, No.2, 89-92, February, 2005

DOI10.3740/MRSK.2005.15.2.089 Export Citation

유도용해법으로 제조된 Co1-xNbxSb3의 열전특성

Thermoelectric Properties of Co1-xNbxSb3 Prepared by Induction Melting

박종범, 유신욱, 조경원, 장경욱¹, 이정일, 어순철 , 김일호 ^†

충주대학교 신소재공학과/나노기술연구소
¹한서대학교 신소재공학과

J.B. Park, S.W. You, K.W. Cho, K.W. Jang¹, J.I. Lee, S.C. Ur , and I.H. Kim^†

Department of Materials Science and Engineering/NT Lab., Chungju National University, Korea
¹Department of Advanced Materials Engineering, Hanseo University, Korea

E-mail:

The induction melting was employed to prepare Nb-doped CoSb3 skutterudites and their thermoelectric properties were investigated. Single phase CoSb3 was successfully obtained by induction melting and subsequent annealing at 400C for 2 hrs in vacuum. The positive signs of Seebeck coefficients for all the specimens revealed that Nb atoms acted as t-type dopants by substibuting Co atoms, Electrical conductivity decreased and then ticreased with increasing temperature, indication mixed conduction behavior. Electrical conductivity increased by Nb coping, and it was saturated at high temperature. Maximum value of the thermoeletric power factor was shifted to higher temperature with increasing thea amount of Nb doping, mainly orginated from the high Seebeck coefficinent around mixed conduction temperature and high electrical conductivity.

Keywords:skutterudite;CoSb3;thermoelectric;niobium doping

[References]

Sharp JW, Jones EC, Williams RK, Martin PM, Sales BC, J. Appl. Phys., 78, 1013 (1995)
Caillat T, Borshchevski A, Fleurial JP, Proc. 13th Intl. Conf. Thermoelectrics, 58 (1994)
Kawaharada Y, Kurosaki K, Uno M, Yamanaka S, J. Alloys & Comp., 315, 193 (2001)
Caillat T, Borshchevski A, Fleurial JP, J. Appl. Phys., 80(8), 4442 (1996)
Anno H, Matsubara K, Notohara Y, Sakakibara T, Tashiro H, J. Appl. Phys., 86(7), 3780 (1999)
Morelli DT, Meisner GP, Chen BX, Hu SQ, Uher C, Phys. Rev. B, 56, 7376 (1997)
Meisner GP, Morelli DT, Hu S, Yang J, Uher C, Phys. Rev. Lett., 80(16), 3551 (1998)
Kitagawa H, Hasaka M, Morimura T, Nakashima H, Kondo S, Mater. Res. Bull., 35(2), 185 (2000)
Wojciechowski KT, Tobola J, Leszczynski J, J. Alloys & Comp., 361, 19 (2003)
Morelli DT, Caillat T, Fleurial IP, Borshchevski A, Vandersande J, Chen B, Uher C, Phys. Rev. B, 51, 9622 (1995)
Feschotte P, Lorin D, J. Less-Common Metals, 155, 255 (1989)
Tashiro H, Notohara Y, Sakaibara T, Anno H, Matsubara K, Proc. 16th Intl. Conf. Thermoelectrics, 326 (1997)
Nakamoto Y, Tanaka K, Koyanagi T, Proc. 17th Intl. Conf. Thermoelectrics, 302 (1998)
Kim IH, You SW, Park JB, Choi MK, Cho KW, Ur SC, Choi GS, Kim BG, Kim WB, Kim JS, Proc. 23rd Intl. Conf. Thermoelectrics (2004)
Kim IH, Choi GS, Han MG, Kim JS, Lee JI, Ur SC, Hong TW, Lee YG, Ryu SL, Mater. Sci. Forum, 449, 917 (2004)
Katsuyama S, Watanabe M, Kuroki M, Maehata T, Ito M, J. Appl. Phys., 93(5), 2758 (2003)
Matsubara K, Sakakibara T, Notohara Y, Anno H, Shimuzu H, Koyanagi T, Proc. 15th Intl. Conf. Thermoelectrics, 96 (1996)

[Related Articles]

[1] Sharp JW, Jones EC, Williams RK, Martin PM, Sales BC, J. Appl. Phys., 78, 1013 (1995)

[2] Caillat T, Borshchevski A, Fleurial JP, Proc. 13th Intl. Conf. Thermoelectrics, 58 (1994)

[3] Kawaharada Y, Kurosaki K, Uno M, Yamanaka S, J. Alloys & Comp., 315, 193 (2001)

[4] Caillat T, Borshchevski A, Fleurial JP, J. Appl. Phys., 80(8), 4442 (1996)

[5] Anno H, Matsubara K, Notohara Y, Sakakibara T, Tashiro H, J. Appl. Phys., 86(7), 3780 (1999)

[6] Morelli DT, Meisner GP, Chen BX, Hu SQ, Uher C, Phys. Rev. B, 56, 7376 (1997)

[7] Meisner GP, Morelli DT, Hu S, Yang J, Uher C, Phys. Rev. Lett., 80(16), 3551 (1998)

[8] Kitagawa H, Hasaka M, Morimura T, Nakashima H, Kondo S, Mater. Res. Bull., 35(2), 185 (2000)

[9] Wojciechowski KT, Tobola J, Leszczynski J, J. Alloys & Comp., 361, 19 (2003)

[10] Morelli DT, Caillat T, Fleurial IP, Borshchevski A, Vandersande J, Chen B, Uher C, Phys. Rev. B, 51, 9622 (1995)

[11] Feschotte P, Lorin D, J. Less-Common Metals, 155, 255 (1989)

[12] Tashiro H, Notohara Y, Sakaibara T, Anno H, Matsubara K, Proc. 16th Intl. Conf. Thermoelectrics, 326 (1997)

[13] Nakamoto Y, Tanaka K, Koyanagi T, Proc. 17th Intl. Conf. Thermoelectrics, 302 (1998)

[14] Kim IH, You SW, Park JB, Choi MK, Cho KW, Ur SC, Choi GS, Kim BG, Kim WB, Kim JS, Proc. 23rd Intl. Conf. Thermoelectrics (2004)

[15] Kim IH, Choi GS, Han MG, Kim JS, Lee JI, Ur SC, Hong TW, Lee YG, Ryu SL, Mater. Sci. Forum, 449, 917 (2004)

[16] Katsuyama S, Watanabe M, Kuroki M, Maehata T, Ito M, J. Appl. Phys., 93(5), 2758 (2003)

[17] Matsubara K, Sakakibara T, Notohara Y, Anno H, Shimuzu H, Koyanagi T, Proc. 15th Intl. Conf. Thermoelectrics, 96 (1996)