GaMnAs의 Be 병행 도핑에 의한 자기 수송 특성 연구

임완순; 윤대식; 우부성; 고존서; 김도진; 임영언; 김효진; 김창수; 김종오; W.S. Im; T.S. Yoon; F.C. Yu; C.X. Gao; D.J. Kim; Y.E. Ibm; H.J. Kim; C.S. Kim; C.O. Kim

Korean Journal of Materials Research, Vol.15, No.1, 73-77, January, 2005

DOI10.3740/MRSK.2005.15.1.073 Export Citation

GaMnAs의 Be 병행 도핑에 의한 자기 수송 특성 연구

Magnetotransport of Be-doped GaMnAs

임완순, 윤대식, 우부성, 고존서, 김도진 ^†, 임영언, 김효진 , 김창수¹, 김종오

충남대학교 재료공학과 및 고기능성 자성 재료 연구센터
¹한국표준과학연구원

W.S. Im, T.S. Yoon, F.C. Yu, C.X. Gao, D.J. Kim^†, Y.E. Ibm, H.J. Kim , C.S. Kim¹, and C.O. Kim²

Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University, Daejeon, 305-764 Korea
¹Korea Research Institute of Standards and Science, Daejeon 305-606, Korea
²Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University, Daejeon 305-764 Korea

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Motivated by the enhanced magnetic properties of Mg-codoped GaMnN ferromagnetic semiconductors, Be-codoped GaMnAs films were grown via molecular beam epitaxy with varying Mn flux at a fixed Be flux. The structural, electrical, and magnetic properties were investigated. GaAs:(Mn,Be) films showed metallic behavior while GaAs:Mn films showed semiconducting behavior as determined by the temperature dependent resistivity measurements. The Hall-effect measurements with varying magnetic field showed clear anomalous Hall effect up to room temperature proving ferromagnetism and magnetotransport in the GaAs:(Mn,Be) films. Planar Hall resistance measurement also confirmed the properties. The dramatic enhancement of the Curie temperature in GaMnAs system was attributed to Be codoping in the GaMnAs films as well as MnAs precipitation.

Keywords:spintronics;magnetotransport;GaMnAs

[References]

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Shen A, Matsukura F, Guo SP, Sugawara Y, Ohno H, Tani M, Abe H, Liu HC, J. Crystal Growth, 201-202, 679 (1999)
Ohno H, J. Mag. Mag. Mater., 200, 110 (1999)
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Shimizu H, Hayashi T, Nishinaga T, Tanaka M, Appl. Phys. Lett., 74, 398 (1999)
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Kim KH, Lee KJ, Kim DJ, Kim HJ, Ihm YE, Kim CG, Yoo SH, Kim CS, Appl. Phys. Lett., 82, 4755 (2003)
Kim KH, Lee KJ, Kim DJ, Kim CS, Lee HC, Kim CG, Yoo SH, Kim HJ, Ihm YE, J. Appl. Phys., 93, 6793 (2003)
Ohno H, Shen A, Matsukura F, Oiwa A, Endo A, Katsumoto S, Iye Y, Appl. Phys. Lett., 69, 363 (1996)
Kim KH, Park JH, Kim BD, Kim CS, Kim DJ, Kim HJ, Ihm YE, Metals Mater., 8, 177 (2002)
Chang CR, IEEE Tr. Mag., 36, 1214 (2000)
Kakuno K, Jpn. J. Appl. Phys., 33, 1334 (1994)
Yu FC, Im WS, Gao CX, Kim DJ, Kim HJ, Ihm YE, Nanotechnology, submitted
Tanaka M, Harbison JP, Deboeck J, Sands T, Philips B, Cheeks TL, Keramidas VG, Appl. Phys. Lett., 63, 1565 (1993)

[Related Articles]

[1] Shen A, Horikoshi Y, Ohno H, Guo SP, Appl. Phys. Lett., 71, 1540 (1997)

[2] Ohno H, Science, 281, 951 (1998)

[3] Shen A, Matsukura F, Guo SP, Sugawara Y, Ohno H, Tani M, Abe H, Liu HC, J. Crystal Growth, 201-202, 679 (1999)

[4] Ohno H, J. Mag. Mag. Mater., 200, 110 (1999)

[5] Hayashi T, Tanaka M, Nishinaga T, Shimada H, Tsuchiya H, Otuka Y, J. Crystal Growth, 175-176, 1063 (1997)

[6] Shimizu H, Hayashi T, Nishinaga T, Tanaka M, Appl. Phys. Lett., 74, 398 (1999)

[7] Van Esch A, Van Bockstal L, De Boeck J, Verbanck G, Van Steenbergen AS, Wellmann PJ, Grietens B, Bogaerts R, Herlach F, Borghs G, Phys. Rev. B, 56, 13103 (1997)

[8] Kim KH, Lee KJ, Kim DJ, Kim HJ, Ihm YE, Kim CG, Yoo SH, Kim CS, Appl. Phys. Lett., 82, 4755 (2003)

[9] Kim KH, Lee KJ, Kim DJ, Kim CS, Lee HC, Kim CG, Yoo SH, Kim HJ, Ihm YE, J. Appl. Phys., 93, 6793 (2003)

[10] Ohno H, Shen A, Matsukura F, Oiwa A, Endo A, Katsumoto S, Iye Y, Appl. Phys. Lett., 69, 363 (1996)

[11] Kim KH, Park JH, Kim BD, Kim CS, Kim DJ, Kim HJ, Ihm YE, Metals Mater., 8, 177 (2002)

[12] Chang CR, IEEE Tr. Mag., 36, 1214 (2000)

[13] Kakuno K, Jpn. J. Appl. Phys., 33, 1334 (1994)

[14] Yu FC, Im WS, Gao CX, Kim DJ, Kim HJ, Ihm YE, Nanotechnology, submitted

[15] Tanaka M, Harbison JP, Deboeck J, Sands T, Philips B, Cheeks TL, Keramidas VG, Appl. Phys. Lett., 63, 1565 (1993)