HFCVD법에 의한 H 2 다이아몬드 박막 제조에 수소가 미치는 영향

이권재; 신재수; 권기홍; 이민수; 고재귀; Kwon-Jai Lee; Jae-Soo Shin; Ki-Hong Kwon; Min-Soo Lee; Jae-Gui Koh

Korean Journal of Materials Research, Vol.14, No.12, 835-839, December, 2004

DOI10.3740/MRSK.2004.14.12.835 Export Citation

HFCVD법에 의한 H 2 다이아몬드 박막 제조에 수소가 미치는 영향

Effect of H 2 on The Diamond Film Growth Mechanism by HFCVD Method Using CH 3 OH/H 2 O

이권재^†, 신재수¹, 권기홍¹, 이민수², 고재귀

숭실대학교 물리학과
¹대전대학교 전자재료과학과
²한남대학교 광.전자물리학과

Kwon-Jai Lee^†, Jae-Soo Shin¹, Ki-Hong Kwon¹, Min-Soo Lee², and Jae-Gui Koh

Department of Physics, Soongsil University, Seoul 156-013, Korea
¹Department of Electronic Materials Science, Daejeon University, Daejeon 300-716, Korea
²Department of Applied Optics and Electromagnetics, Hannam University, Daejon 309-791, Korea

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The diamond thin films was deposited on Si(100) substrate by Hot Filament Chemical Vapor Deposition (HFCVD) method using supplied the CH 3 OH/H 2 O mixtured gas with excess H_{2} gas. The role of hydrogen ion as the growth mechanism of the diamond deposit was examined and compared the CH 3 OH/H 2 O with the CH 4 /H 2 . Pressures in the range of 1.1∼290×10 2 Pa were applied and using 3.4∼4.4 kw power. It was investigated by Scanning Electron Microscopy(SEM) and Raman spectroscopy The H ion was etching the graphite and restrained from sp 3 tosp 2 . But excess H 2 gas was not helped diamond deposit using CH 3 OH/H 2 O mixtured gas. It was shown that the role of hydrogen ion of deposited diamond films using CH 3 OH/H 2 O was different from CH 4 /H 2 .

Keywords:HFCVD method;diamond film;growth mechanism

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[1] Deryagin BV, Fedoseev DB, Sci. An., 233, 102 (1975)

[2] Geis MW, Proceedings of the IEEE., 79(5), 669 (1991)

[3] May PW, Phil. Trans. R. Soc. Lond. A, 358, 473 (2000)

[4] Tessmer AJ, Plano LS, Dreifus DL, Diamond and Related Material, 1, 89 (1992)

[5] Tsugawa K, Kitatani K, Hawarda, presented at Diamond, Greece, 2. Semtember 13-18, 17 (1998) (1998)

[6] Kromka A, Malcher V, Janik J, Dubravcova V, Satka A, Cerven I, ASDAM 2000, Smolenice Castle, Slovakia, 16-18, 299 (2000) (2000)

[7] Kadlecikava M, Breza J, Vesely M, Luptakova V, Balon F, Vojackova A, Janik J, Kromka A, ASDAM 2002, Smolenice Castle, Slovakia, 14-16, 235 (2002)

[8] Kawato T, Kanda K, Jpn. J. Appl. Phys., 26, 1429 (1987)

[9] Frenklach M, Spear KE, J. Mater. Res., 3, 133 (1988)

[10] Angus JC, Will HA, Stanko WS, J. Appl. Phys., 39, 2915 (1968)

[11] Chanhan SP, Angus JC, Gardnet NC, J. Appl. Phys., 47, 4746 (1976)

[12] Li Z. Tolt, Heatherly L, Clausing RE, Feigerle CS, J. Appl. Phys., 81(3), 1536 (1997)

[13] Badzian AR, Vadzian T, Roy R, Messiec R, Spear KE, Mater. Res. Bull., 23, 531 (1998)

[14] Yu Z, Karlsson U, Flodstrom A, Thin Solid Films, 342(1-2), 74 (1999)

[15] Tsang RS, May PW, Ashfold MNR, Diamond and Relat. Mater., 8, 242 (1999)

[16] Badziagm P, Verwoerd WS, Ellis WP, Greiner NR, Nature, 343, 244 (1990)

[17] Hwang NM, Bahng HW, Yoon DY, Diamond Rela. Mater, 1, 191 (1992)

[18] Hwang NM, Hahn JH, Yoon DY, J. Cryst. Growth, 160, 87 (1996)

[19] Celli FG, Butler JE, Appl. Phys. Lett., 54, 1031 (1989)

[20] Harris SJ, Weiner AM, Perry TA, Appl. Phys. Lett., 53, 1605 (1988)

[21] Pandey KC, Phys. Rev. B, 25, 4338 (1992)

[22] Machlin ES, J. Mater. Res., 3, 958 (1988)

[23] Flenklach M, J. Appl. Phys., 65, 5142 (1989)

[24] Matsumato O, Katagiri T, Thin Solid Films, 146, 283 (1987)

[25] Lee KJ, Koh JG, Kor. J. of Mater. Res., 11, 1014 (2001)

[26] Lee KJ, Koh JG, Shin JS, Kor. J. of Mater. Res., 13, 31 (2003)

[27] Hiramatsu M, Noda H, Nagai H, Shimakura M, Nawata M, Thin Solid Films, 332(1-2), 136 (1998)