화학공학소재연구정보센터
Korean Journal of Materials Research, Vol.14, No.10, 683-687, October, 2004
RF-PECVD 법으로 제조된 비정질 BON박막의 산화
Oxidation of Amorphous BON Thin Films Grown by RF-PECVD
E-mail:
The BON thin films were grown on the Si substrate by the RF-PECVD method. When stored at the room temperature, the phase separation or transition of BON thin films occurred on the surface, due to the hydrophilic property of BON. The oxidation of BON thin films occurred mainly by the evaporation of B, O and N. The oxidized BON thin films consisted of an amorphous phase and a bit of the polycrystalline phase.
  1. Lundstrom T, Andreev YG, Mater. Sci. Eng. A, 209, 16 (1996)
  2. DeVrises RC, in Cubic Boron Nitrided: Hanbook of Properties, General Electric Rep., No. 72CRD178, (1972) (1972)
  3. Xue D, Zhang S, Appl. Phys. A, 65, 451 (1997)
  4. Tian J, Xia L, Ma X, Sun Y, Byon ES, Lee SH, Lee SR, Thin Solid Films, 139, 247 (1986)
  5. Arya SPS, D'aMico A, Thin Solid Films, 157, 267 (1998)
  6. Boo JH, Rohr C, Ho W, J. Cryst. Growth, 189-190, 439 (1998)
  7. Sahu S, Kavecky S, Illesova L, Madejova J, Bertoti I, Szepvolgyi J, J. Eurp. Ceram. Soc., 18, 1037 (1998)
  8. Lim DC, Chen GC, Boo JH, Surf. Coat. Tech., 171, 101 (2003)
  9. Dekempeneer EHA, Meneve J, Kuypers S, Smeets J, Thin Solid Films, 281, 331 (1996)
  10. Byon E, Son MS, Lee GH, Kwon SC, J. Kor. Inst. Surf. Eng., 36, 229 (2003)
  11. Su S, J. Molecular Structure, 430, 137 (1998)
  12. Tsou HT, Kowbel W, Surf. Coat. Tech., 79, 139 (1996)