이종에피에 의해 증착한 BiFeO 3 박막의 전기 및 자기특성

이은구; D. Viehland; Eun Gu Lee; D. Viehland

Korean Journal of Materials Research, Vol.14, No.10, 707-712, October, 2004

DOI10.3740/MRSK.2004.14.10.707 Export Citation

이종에피에 의해 증착한 BiFeO 3 박막의 전기 및 자기특성

Electric and Magnetic Properties of Hetero-Epitaxially Deposited BiFeO 3 Thin Films

이은구^†, D. Viehland¹

조선대학교 신소재공학과
¹버지니아주립대 재료공학과

Eun Gu Lee^†, and D. Viehland¹

Department of Advanced Materials Science and Engineering, Chosun University, #375 Seosuk-dong, Dong-gu, Kwangju 501-759, Korea
¹Dept. of Materials Science and Engineering, Virginia Tech, Blacksburg, VA 24061, USA

E-mail:

BiFeO 3 films grown on (111) SrTiO 3 substrate have a rhombohedral structure, identical to that of single crystals. On the other hand, films grown on (110) or (001) SrTiO 3 substrate are monoclinically distorted from the rhombohedral structure due to the epitaxial constraint. The easy axis of spontaneous polarization is close to [111] for the variously oriented films. Dramatically enhanced polarization and magnetization have been found for hetero-epitaxially grown BiFeO 3 thin films comparing to that of BiFeO 3 crystals. The results are explained in terms of an epitaxially-induced transition between cycloidal and homogeneous spin states, via magneto-electric interactions.

Keywords:ferroelectric;ferromagnetic;magnetoelectric;thin film;heteroepitaxy

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[2] Hill NA, J. Phys. Chem. B, 104(29), 6694 (2000)

[3] Isupov VA, Phys. Status Solidi. A, 181, 211 (2000)

[4] Kashlinskii AI, Chechernikov VI, Venevtsev YN, Sov. Phys.-Solid State, 8, 2074 (1969)

[5] Kumar MM, Srinath S, Kumar GS, Suryanarayana SV, J. Magn. Mag. Mater., 188, 203 (1998)

[6] Fedulov SA, Ladyzhinskii PB, Pyatigorskaya IL, Venevtsev YN, Sov. Phys.-Solid State, 6, 375 (1964)

[7] Smolenskii GA, Yudin VM, Sov. Phys.-Solid State, 6, 2936 (1965)

[8] Fujii T, Jinzenji S, Asahara Y, Kajima A, Shinjo T, J. Appl. Phys., 64, 5434 (1998)

[9] Kanai T, Ohkoshi S, Hashimoto K, J. Phys and Chem. Solids, 64, 391 (2003)

[10] Ueda K, Tabata H, Kawai T, Appl. Phys. Lett., 75, 555 (1999)

[11] Astrov DV, Sov. Phys. JETP, 11, 708 (1960)

[12] Fischer P, Polomska M, Sosnowsa I, Szymanski M, J. Phys. C, 13, 1931 (1980)

[13] Kiselov SV, Ozerov RP, Zdanov GS, Sov. Phys. Dokl., 7, 742 (1963)

[14] Sosnowska I, Peterlin-Neumaier T, Steichele E, J. Phys. C, 15, 4835 (1982)

[15] Tabares-Munoz C, Rivera JP, Bezinge A, Schmid H, Monnier A, Jpn. J. Appl. Phys., 24, 1051 (1985)

[16] Wang J, Neaton JB, Zheng H, Nagarajan V, Ogale SB, Liu B, Viehland D, Vaithyanathan V, Schlom DG, Waghmare UV, Spaldin NA, Rabe KM, Wuttig M, Ramesh R, Science, 299, 1719 (2003)

[17] Fischer P, Polomskya M, Sosnowska I, Szymanksi M, J. Phys. C, 13, 1931 (1980)

[18] Michel C, Moreau JM, Achenbach GD, Gerson R, James WJ, Solid State Commun., 7, 701 (1969)

[19] Bucci JD, Robertson BK, James WJ, J. Appl. Cryst., 5, 187 (1972)

[20] Teague JR, Gerson R, James WJ, Solid State Commun., 8, 1073 (1970)

[21] Roginskaya YE, Tomashpol'skii YY, Venevtsev YN, Petrov VM, Zhdanov GS, Sov. Phys. JETP, 23, 47 (1966)

[22] Kiselev SV, Ozerov RP, Zhdnov GS, Sov, Phys. Dokl., 7, 742 (1963)

[23] Sosnowska I, Loewenhaupt M, David WIF, Ibberson R, Physica B, 180-181, 117 (1992)

[24] Ruette B, Zvyagin S, Pyatakov AP, Bush A, Li JF, Belotelov VI, Zvezdin AK, Viehland D, Phys. Rev. B, 69, 64114 (2004)

[25] Gabbasova ZV, Kuz'min MD, Zvezdin AK, Dubenko KS, Murashov VA, Rakov DN, Krynetsky IB, Phys. Lett. A, 158, 491 (1991)

[26] Viehland D, Powers J, Li JF, Ewart L, J. Appl. Phys., 88, 4907 (2000)