화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Materials Research, Vol.14, No.7, 482-488, July, 2004
DOI10.3740/MRSK.2004.14.7.482  Export Citation
기상휘발법에 의한 이산화규소 나노와이어의 성장
Growth of SiO 2 nanowire by Vapor Phase Evaporation
노대호†, 김재수1, 변동진, 이재훈2, 양재웅3, 김나리, 조성일
  • 고려대학교 재료공학과
  • 1한국과학기술연구원 금속공정연구센터
  • 2한국생산기술연구원 신소재본부
  • 3대진대학교 신소재공학과
Rho Dae-Ho†, Kim Jae-Soo1, Byun Dong-Jin, Lee Jae-Hoon2, Yang Jae-Woong3, Kim Na-Ri, and Cho Sung-Il
  • Department of Materials Science and Engineering, Korea University, Korea
  • 1Metal Processing Research Center, Korea Institute of Science and Technology, Korea
  • 2Advanced Materials Center, Korea Institute Of Industial Technology, Korea
  • 3Department of Advanced Materials Science and Techology, Dajin University, Korea
E-mail:
SiO 2 nanowires were synthesized using the vapor evaporation method. Grown nanowires had a different shapes by kind of substrates. Diameters and lengths of the nanowires increased with increasing growth temperature and time. Mean diameters and lengths of SiO 2 nanowire were different by kind of substrates. These variations were attributed to nanowire densities on the substrates. The kind of substrates affected microstructure and PL properties of grown nanowires. In case of Al 2 O 3 and quartz substrates, additional O 2 were supported during growth stages, and made a nucleation site. Therefore relative narrow nanowire was grown on Al 2 O 3 and quartz substrates. Optical property were measured by photoluminescence spectroscopy. Relatively broad peak was obtained and mean peak positioned at 450 and 420nm. however in case of quartz substrates, mean peak positioned at 370nm. These peak shift was contributed to the size and substrate effects.
Keywords:nanowire;Quartz
  1. Iijima S, 1991, 'Helical Microtubules of Graphitic Carbon,' Nature, Vol. 254, pp. 56-58 (1991)
  2. Li ZJ, Chen XL, Li HJ, Xu YP, J. Cryst. Growth, 236(1-3), 71 (2002)
  3. Rho DH, Kim JS, Byun DJ, Yang JW, Kim NR, Korean J. Mater. Res., 13(6), 404 (2003)
  4. Kim NR, Kim JS, Byun DJ, Rho DH, Yang JW, Korean J. Mater. Res., 13(10), 668 (2003)
  5. liang CH, Zhang LD, Meng GW, Wang YW, Chu ZQ, J. Non-Cryst. Solids, 277(1), 63 (2000)
  6. Yu DP, Hong QL, Ding Y, Zhang HZ, Bai ZG, Wang JJ, Zou YH, Qian W, Xiong GG, Feng SQ, Appl. Phys. Lett., 73(21), 3076 (1988)
  7. Liu ZQ, Xie SS, Sun LF, Tang DS, Zhou WY, Wang CY, Liu W, Li YV, Zou XP, Wang G, J. Mater. Res., 16(3), 683 (2001)
  8. Wu WC, Song WH, Wang KY, Hu T, Zhao B, Sun YP, Du JJ, Chem. Phys. Lett., 336(1), 53 (2001)
  9. Takikawa H, Yatsuki M, Sakakibara T, Jpn. J. Appl. Phys., 38, L401 (1999)
  10. Wang ZL, Gao RPP, Gole JL, Stout JD, Adv. Mater., 12(24), 1938 (2000)
  11. Pan ZW, Dai ZR, Ma C, Wang ZL, J. Am. Chem. Soc., 124(8), 1817 (2002)
  12. Givargizov EI, J. Cryst. Gr., 31, 20 (1975)
  13. Rho DH, Kim JS, Byun DJ, Yang JW, Kim NR, Korean J. Mater. Res., 13(10), 677 (2003)
  14. Zhou XT, Lai HL, Peng HY, Au FCK, Liao LS, Wang N, Bello I, Lee CS, Lee ST, Chem. Phys. Lett., 318(1), 58 (2000)
  15. Pan ZW, Xie SS, Sun LE, Wang G, Chem. Phys. Lett., 299, 97 (1999)
  16. Lee CJ, Park JH, Park J, Chem. Phys. Lett., 323(5-6), 560 (2000)
  17. Yumoto H, Hasiguti RR, Watanabe T, Igota J, J. Cryst. Gr., 87, 1 (1998)
  18. Li HJ, Li ZJ, Meng AL, Li KZ, Zhang XN, Xu YP, J. Alloys and Compounds, 352(2), 279 (2003)
  19. Hu JQ, Jiang Y, Meng XM, Lee CS, Lee ST, Chem. Phys. Lett., 367(3-4), 339 (2003)
  20. Wu JJ, Wong TC, Yu CC, Adv. Mater., 14(22), 1643 (2002)
  21. Tirchnska TV, Rodriquez MM, Hemadez AV, Cheah KW, J. Luminescence, 102, 551 (2003)
  22. Tirchnska TV, Rodriquez MM, Khomenkova LY, Surface Science, 532, 1204 (2003)