Transparent ZnO:Al conductor films for the optoelectronic devices were deposited by using the capacitively coupled DC magnetron sputtering method. The effect of Al doping concentration and discharge power on the electrical and optical properties of the films was studied. The film resistivity of 8.5 {\times}10 ?4 Ω -cm was obtained at the discharge power of 40 W with the ZnO target doped with 2 wt% Al 2 O 3 . The transmittance of the 840 nm thick film was 91.7% in the visible waves. Increasing doping concentration of 3 wt% Al 2 O 3 in ZnO target results in significant decrease of film resistivity, which may be due to the formation of Al 2 O 3 particles in the as-deposited ZnO:Al film and the reduced ZnO grain sizes. Increasing DC power from 40 to 60 W increases deposition rate by more than 50%, but can induce high defect density in the film, resulting in higher film resistivity.