저온 분자선 에피택시법을 이용한 GaMnAs 자성반도체 성장 및 특성 연구

박진범; 고동완; 박용주; 오형택; 신춘교; 김영미; 박일우; 변동진; 이정일; Jin-Bum Park; Dongwan Koh; Young Ju Park; Hyoung-taek Oh; Chun-Kyo Shinn; Young-Mi Kim; Il-Woo Park; Dong-Jin Byun; Jung-Il Lee

Korean Journal of Materials Research, Vol.14, No.4, 235-238, April, 2004

DOI10.3740/MRSK.2004.14.4.235 Export Citation

저온 분자선 에피택시법을 이용한 GaMnAs 자성반도체 성장 및 특성 연구

A Study on Growth and Characterization of Magnetic Semiconductor GaMnAs Using LT-MBE

박진범, 고동완¹, 박용주^{1, †}, 오형택¹, 신춘교¹, 김영미², 박일우², 변동진 , 이정일¹

고려대학교 재료공학과
¹한국과학기술연구원 나노소자연구센터
²한국기초과학지원연구원

Jin-Bum Park, Dongwan Koh¹, Young Ju Park^{1, †}, Hyoung-taek Oh¹, Chun-Kyo Shinn¹, Young-Mi Kim², Il-Woo Park², Dong-Jin Byun , and Jung-Il Lee¹

Department of Materials Science, Korea University, Seoul 136-701, Korea
¹Nano-Device Research Center, Korea Institute of Science & Technology, Seoul 136-791, Korea
²Korea Basic Scinece Institute, Anam-Dong, Sungbuk-ku, Seoul 136-701, Korea

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The LT-MBE (low temperature molecular beam epitaxy) allows to dope GaAs with Mn over its solubility limit. A 75 urn thick GaMnAs layers are grown on a low temperature grown LT-GaAs buffer layer at a substrate temperature of 260 ? C by varying Mn contents ranged from 0.03 to 0.05. The typical growth rate for GaMnAs layer is fixed at 0.97 μm /h and the V/III ratio is varied from 25 to 34. The electrical and magnetic properties are investigated by Hall effect and superconducting quantum interference device(SQUID) measurements, respectively. Double crystal X-ray diffraction(DCXRD) is also performed to investigate the crystallinity of GaMnAs layers. The T c of the Ga l?x / Mn x As films grown by LT-MBE are enhanced from 38 K to 65 K as x increases from 0.03 into 0.05 whereas the T c becomes lower to 45 K when the V/III ratio increases up to 34 at the same composition of x=0.05. This means that the ferromagnetic exchange coupling between Mn-ion and a hole is affected by the growth condition of the enhanced V/III ratio in which the excess-As and As-antisite defects may be easily incorporated into GaMnAs layer.

Keywords:GaMnAs;LT-MBE;V/III ratio;As 2

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[1] Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D, Science, 287, 1019 (2000)

[2] Oestreich M, Bender M, Hubner J, Klar PJ, Semicond. Sci. Technol., 17, 285 (2002)

[3] Johnson M, Semicond. Sci. Technol., 17, 298 (2002)

[4] Oiwa A, Katsumoto S, Endo A, Hirasawa M, lye Y, Matsukura F, Shen A, Physica B, 249, 775 (1998)

[5] Ohno H, Munekata H, Penney T, Molnar SV, Chang LL, Phys. Rev. Lett., 68, 2664 (1992)

[6] Dietl T, Ohno H, Physica E, 9, 185 (2001)

[7] Ohno H, Munekata H, Molnar SV, Chang LL, J. Appl. Phys., 69, 6103 (1991)

[8] Ohno H, Shen A, Matsukura F, Oiwa A, Endo A, Katsumoto S, Iye Y, Appl. Phys. Lett., 69, 363 (1996)

[9] Esch AV, Boeck JD, Bockstal LV, Bogarts R, Herlach F, Borghs G, J. Phys. : Condens. Matter, 9, L361 (1997)

[10] Tanaka M, Physica E, 2, 372 (1998)

[11] Ohno H, Matsukura F, Omiya T, Akiba N, J. Appl. Phys., 85, 4277 (1999)

[12] Munekata H, Ohno H, Molnar SV, Semuller A, Chang LL, Esaki L, Phys. Rev. Lett., 63, 1849 (1989)

[13] Shen A, Matsukura F, Guo SP, Sugawara Y, Ohno H, Tani M, Abe H, Liu HC, J. Crystal Growth, 201-202, 679 (1999)

[14] Shen A, Horikoshi Y, Ohno H, Guo SP, Appl. Phys. Lett., 71, 1540 (1997)

[15] Munekata H, Mater. Sci. Eng. B, 31, 151 (1995)

[16] Sano H, Suda A, Hatanaka T, Mizutani G, Otsuka N, J. Appl. Phys., 88, 3948 (1998)

[17] Hauashi T, Hashimoto Y, Katsumoto S, lye Y, Appl. Phys. Lett., 78, 1691 (2001)

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[20] Ohno H, Science, 281, 951 (1998)