화학공학소재연구정보센터
Korean Journal of Materials Research, Vol.14, No.3, 163-167, March, 2004
이온플레이팅법으로 제조된 TiAlLaN계 박막의 산화속도
Oxidation Rates of TiAlLaN Thin Films Deposited by Ion Plating
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TiAl(La)N thin films were oxidized in vacuum of about 7 Pa to reduce the oxidation of WC-Co as a substrate. The oxidation rate constants of the thin films were quantified by an assumption of parabolic oxidation. Increasing AI content significantly decreased the parabolic oxidation rate constant. A simultaneous addition of AI and La was more effective to reduce the oxidation rate. The parabolic oxidation rate constant of Ti 0.66 Al 0.32 La 0.02 N thin film at 1273 K showed about ten times lower than that of TiN. The addition of a small amount of La with Al induced the preferential formation of dense α ?Al 2 O 3 film in oxide film, leading to the abrupt reduction of oxidation rate.
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