Piezoelectric효과와 열 효과 모델링을 고려한 AlGaN/GaN HFET의 DC 특성

박승욱; 황승욱; 신무환; Seung-Wook Park; Seung-Wook Park; Moo-Whan Shin

Korean Journal of Materials Research, Vol.13, No.12, 769-774, December, 2003

DOI10.3740/MRSK.2003.13.12.769 Export Citation

Piezoelectric효과와 열 효과 모델링을 고려한 AlGaN/GaN HFET의 DC 특성

DC Characteristics of AlGaN/GaN HFETs Using the Modeling of Piezoelectric and Thermal Effects

박승욱, 황승욱¹, 신무환^{1, †}

칩팩코리아
¹명지대학교 세라믹공학과 반도체 재료/소자 연구실

Seung-Wook Park, Seung-Wook Park¹, and Moo-Whan Shin^{1, †}

ChipPAC KOREA, San 136-1, Ami-Ri, Bubal-Eub, Ichon-So, Kyoungki-Do, 467-701, Korea
¹Semiconductor Materials/Device Lab., Department of Ceramic Engineering, Myong Ji University, 38-2 Nam-Dong, Yongin-Si, Kyunggi-Do, 449-728, Korea

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In this paper, we report on the DC characteristics of the AlGaN/GaN HFETs using physical models on piezoelectric and thermal effects. Employing the models was found to be essential for a realistic prediction of the DC current-voltage characteristics of the AlGaN/GaN HFETs. Though use of the implementation of the physical models, peak drain current, transconductance, pinch-off voltage, and most importantly, the negative slope in the current were accurately predicted. The importance of the heat sink effect was demonstrated by the comparison of the DC characteristics of AlGaN/GaN HFETs fabricated from different substrates including sapphire, Si and SiC. Highest peak current was achieved from the device with SiC by an effective suppression of heat sink effect.

Keywords:GaN;HFET (Hetero Filed Effect Transistor);2DEG (2 Dimensional Electron Gas);Heat sink effect

[References]

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Silvaco Atlas user's Manual Volume 1

[1] Pearton SJ, Ren F, Zhang AP, Lee KP, Mater. Sci. Eng. R, 30(3), 55 (2000)

[2] Shur MS, Khan A, Gelmont B, Trew RJ, Shin MW, Proceedings of the 21st International Symposium on Compound Semiconductors (San Diego, CA, USA, Sep 1995) p.18 (1995)

[3] Kim H, Thomson R, Tilak V, Prunty TR, Shealy JR, Eastman LF, IEEE Electron Device Lett., 24(7), 421 (2003)

[4] Asbeck PM, Yu ET, Lau SS, Sun W, Dang X, Shi C, Solid-State Electron., 44(2), 211 (2000)

[5] Shur MS, Gaska R, Bykhovski A, Solid-State Electronics, 43(8), 1451 (1999)

[6] Daumiller I, Kirchner C, Kamp M, Ebeling KJ, Kohn, IEEE Electron Device Letters., 20(9), 448 (1999)

[7] Alekseev E, Member, IEEE, Pavlids D, Nguyen, Member, IEEE, Nguyen C, Member, IEEE, Grider DE, IEEE Transactions on Microwave Theory and Techniques., 48(10), 1694 (2000)

[8] Cao XA, Van Hove JM, Klaassen JJ, Polley CJ, Wowchak AM, Chow PP, King DJ, Zhang AP, Dang G, Monier C, Pearton SJ, Ren F, Solid-State Electron., 44(7), 1255 (2000)

[9] Danielsson E, Zetterling CM, Ostling M, Breitholtz B, Linthicum K, Thomson DB, Nam OH, Davis RF, Mater. Sci. Eng. B, 61-62, 320 (1999)

[10] Lambert DJH, Lin DE, Dupuis RD, Solid-State Electron., 44(2), 253 (2000)

[11] Silvaco Atlas user's Manual Volume 1