MOCVD법과 MOD법으로 제작된 Ta 2 O 5 박막의 열처리 온도에 따른 유전특성연구

강필규; 진정근; 변동진; 배재준; 남산; Pilkyu Kang; Junggeun Jhin; Dongjin Byun; Jaejun Bae; Sahn Nahm

Korean Journal of Materials Research, Vol.13, No.12, 801-805, December, 2003

DOI10.3740/MRSK.2003.13.12.801 Export Citation

MOCVD법과 MOD법으로 제작된 Ta 2 O 5 박막의 열처리 온도에 따른 유전특성연구

Dielectric Properties of Ta 2 O 5 Films Annealed at Various Temperature by MOCVD and MOD

강필규, 진정근, 변동진 ^†, 배재준, 남산

고려대학교 재료공학과

Pilkyu Kang, Junggeun Jhin, Dongjin Byun^†, Jaejun Bae, and Sahn Nahm

Department of Materials Science and Engineering, Korea University, Seoul, 136-701, Korea

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To explore the annealing temperature dependence of dielectric properties Ta 2 O 5 thin films were prepared by MOCVD(metal-organic chemical vapor deposition) and MOD(metal-organic decomposition). The Ta 2 O 5 thin films fabricated MOCVD and MOD were annealed in O 2 at temperature between 600 and 90 0 ? C . The measured dielectric constant of both films at 100 KHz was the highest value at 650 ? C and decreased with increasing annealing temperature above 650 ? C . Plane-view SEM image showed that the boundary seems to be crack broke out with increasing annealing temperature. It was confirmed that outbreak of boundary influenced a decrease of dielectric constant with increasing annealing temperature. The leakage current density increased with increasing annealing temperature.

Keywords:Ta 2 O 5;MOD;MOCVD

[References]

Watanabe T, Mochizuki T, Shinozuki S, Menjoh A, Ogawa O, 23th Anneal Proc. Reliability Phys. Conf., 18 (1985)
Ohta K, Yamada K, Shimizu K, Taruri Y, IEEE Trans. Electron Devices, ED-29(3), 368 (1982)
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[Related Articles]

[1] Watanabe T, Mochizuki T, Shinozuki S, Menjoh A, Ogawa O, 23th Anneal Proc. Reliability Phys. Conf., 18 (1985)

[2] Ohta K, Yamada K, Shimizu K, Taruri Y, IEEE Trans. Electron Devices, ED-29(3), 368 (1982)

[3] Lin J, Masaaki N, Tsukune A, Yamada M, Appl. Phys. lett, 74(16), 2370 (1999)

[4] Kimura S, Nishioka Y, Shinkiri A, Mukai K, J. Electrochem. Soc., 130, 2414 (1983)

[5] Kukli K, Aarik J, Aidla A, Kohan O, Uustare T, Sammelselg V, Thin Solid Films, 260(2), 135 (1995)

[6] Peak SH, Won J, Choi KS, Park CS, Jpn. J. Appl. Phys, 35, 5757 (1996)

[7] Horikawa T, Mikami N, Ito H, Ohno Y, IEICE TRANS. ELECTRON., E77-C(3), 385 (1994)

[8] Waser R, Klee M, Integrated Ferroelectrics, 2, 23 (1992)

[9] Brown DA, Sferlazzo P, O'Hanlon JF, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55, 38 (1991)