적외선 센서를 위해 흡수층으로서 rf Magnetron Sputtering에 의해 제조된 NiCr 박막의 특성

허성기; 최은석; 윤순길; Sung-Gi Hur; Eun-Suck Choi; Soon-Gil Yoon

Korean Journal of Materials Research, Vol.13, No.10, 640-644, October, 2003

DOI10.3740/MRSK.2003.13.10.640 Export Citation

적외선 센서를 위해 흡수층으로서 rf Magnetron Sputtering에 의해 제조된 NiCr 박막의 특성

Characteristics of NiCr Thin Films Prepared by rf Magnetron Sputtering as Absorption Layer for Infrared Sensors

허성기, 최은석, 윤순길^†

충남대학교 재료공학과

Sung-Gi Hur, Eun-Suck Choi, and Soon-Gil Yoon^†

Department of Materials Engineering, Chungnam National University, Korea

E-mail:

NiCr thin films were fabricated by rf magnetron sputtering for applying to both the top electrode and absorption layer on Pb(Zr, Ti)O 3 (PZT) thin films for infrared sensors. The rms roughness and resistivity of NiCr films prepared with Ni power of 80 W and Cr power of 50 W showed the most stable oxidation resistance after annealing at 600 ? C for 5 min in oxygen ambient. The rms roughness and resistivity of NiCr films annealed at V ? C in oxygen ambient were about 2 0\AA and 70μ Ω-cm, respectively. As-deposited Ni/PZT/Pt and NiCr (Ni 80 W, Cr 50 W)/PZT/Pt structures showed well saturated hysteresis loops. However, in case of the samples annealed at 500 ? C in oxygen ambient, only NiCr/PZT/Pt showed saturated loops having a remanent polarization of 20μ C/ cm 2 . Ultra-thin NiCr films showed a possibility as a top electrode for infrared sensors.

Keywords:NiCr alloy;roughness;resistivity;infrared sensor;Pb(Zr;Ti)O 3

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[4] Sung SK, Lee DH, Choi HH, Lee MK, Kwon TH, Journal of the Korea Sensors Society, 11, 57 (2002)

[5] Ye C, Tamagawa T, Schiller P, Polla DL, Sens. Actuators A, 35, 77 (1992)

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[11] Lee EM, Yoon SG, Integr. Ferroelectr., 47, 41 (2002)