Pr 6 O 11 계 ZnO 바리스터 세라믹스의 미세구조 및 전기적 특성에 미치는 Dy 2 O 3 첨가의 영향

남춘우; 박종아; Choon-Woo Nahm; Jong-Ah Park

Korean Journal of Materials Research, Vol.13, No.10, 645-650, October, 2003

DOI10.3740/MRSK.2003.13.10.645 Export Citation

Pr 6 O 11 계 ZnO 바리스터 세라믹스의 미세구조 및 전기적 특성에 미치는 Dy 2 O 3 첨가의 영향

Influence of Dy 2 O 3 Addition on Microstructure and Electrical Properties of Pr 6 O 11 Varistor Ceramics

남춘우^†, 박종아

동의대학교 전기공학과

Choon-Woo Nahm^†, and Jong-Ah Park

Department of Electrical Engineering, Dongeui University, Busanjin-Gu, Busan 614-714, Korea

E-mail:

The microstructure and electrical characteristics of Pr 6 O 11 -based ZnO varistor ceramics composed of ZnO?Pr 6 O 11 / ?CoO?Cr 2 O 3 - Dy 2 O 3 -based ceramics were investigated with Dy 2 O 3 content in the range of 0.0∼2.0 mol%. As Dy 2 O 3 content was increased, the average grain size was decreased in the range of 18.6∼4.7 μm and the density of the ceramic was decreased in the range of 5.53∼4.34 g/㎤. While, the varistor voltage was increased in the range of 39.4∼436.6 V/mm and the nonlinear exponent was in the range of 4.5∼66.6 with increasing Dy 2 O 3 content. The addition of Dy 2 O 3 highly enhanced the nonlinear properties of varistors, compared with the varistor without Dy 2 O 3 . In particular, the varistor with Dy 2 O 3 content of 0.5 mol% exhibited the highest nonlinearity, in which the nonlinear exponent is 66.6 and the leakage current is 1.2 μA . The donor concentration and the density of interface states were decreased in the range of (4.19∼0.33) {\times}10 18 //㎤ and (5.38∼1.74) {\times}10 12 cm 2 , respectively, with increasing Dy 2 O 3 content. The minimum dissipation factor of 0.0302 was obtained from 0.5mol% Dy 2 O 3 .

Keywords:Microstructure;Pr 6 O 11 -based ZnO varistor;Dy 2 O 3;Nonlinear properties

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[4] Alles AB, Burdick VL, J. Appl. Phys., 70, 6883 (1991)

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[11] Nahm CW, Kim HS, J. KIEEME, 15, 776 (2002)

[12] Nahm CW, J. Mater. Sci. Lett., 21(3), 201 (2002)

[13] Nahm CW, Kim HS, Mater. Lett., 56, 379 (2002)

[14] Nahm CW, Shin BC, J. Mater. Sci. Mater. Electron., 13, 111 (2002)

[15] Nahm CW, Kim HS, Mater. Lett., 57, 1544 (2003)

[16] Nahm CW, Shin BC, Mater. Lett., 57, 1322 (2003)

[17] Nahm CW, Mater. Lett., 57, 1317 (2003)

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[23] Nahm CW, Jung YC, Kor. J. Mat. Res., 7, 1033 (1997)