질화물 반도체의 미세구조 분석을 위한 최적의 TEM 시편 준비법

조형균; 김동찬; Hyung Koun Cho; Dong Chan Kim

Korean Journal of Materials Research, Vol.13, No.9, 598-605, September, 2003

DOI10.3740/MRSK.2003.13.9.598 Export Citation

질화물 반도체의 미세구조 분석을 위한 최적의 TEM 시편 준비법

Optimization of TEM Sample Preparation for the Microstructural Analysis of Nitride Semiconductors

조형균^†, 김동찬

동아대학교 공과대학 금속공학과

Hyung Koun Cho^†, and Dong Chan Kim

Department of Metallurgical Engineering, Dong-A University, Saha-gu, Busan, 604-714, Korea

E-mail:

The optimized conditions for the cross-sectional TEM sample preparation using tripod polisher and ion-beam miller was confirmed by AFM and TEM. For the TEM observation of interfaces including InGaN layers like InGaN/GaN MQW structures, the sample preparation by the only tripod polishing was useful due to the reduction of artifacts. On the other hand, in case of the thick nitride films like ELO, PE, and superlattice, both tripod polishing and controlled ion-beam milling were required to improve the reproducibility. As a result, the ion-beam milling with the modulation showed the minimum height difference between film and sapphire interface and the ion-beam milling of the modulation showed the broad observable width.

Keywords:nitride;TEM;microcstructure;defect;tripod polisher

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[7] Ashby CIH, Mitchell CC, Han J, Missert NA, Provencio PP, Follstaedt DM, Peake GM, Griego L, Appl. Phys. Lett., 77, 3233 (2000)

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