화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Materials Research, Vol.13, No.7, 460-464, July, 2003
DOI10.3740/MRSK.2003.13.7.460  Export Citation
Ti-capping층이 NiSi의 열적안정성에 미치는 영향
Effects of Ti-capping Layers on the Thermal Stability of NiSi
박수진, 이근우, 김주연1, 전형탁1, 배규식†
  • 수원대학교 전자재료공학과
  • 1한양대학교 재료공학부
Soo-Jin Park, Keun-Woo Lee, Ju-Youn Kim1, Hyung-Tak Jun1, and Kyoo-Sik Bae†
  • Department of Electronic Materials Engineering, The University of Suwon, Suwon, 445-743, Korea
  • 1Division of Materials Engineering, Hanyang University, Seoul, 100-791, Korea
E-mail:
Ni and Ti films were deposited by the thermal evaporator, and then annealed in the N 2 ambient at 300-80 0 ? C in a RTA(rapid thermal annealing) system. Four point probe, AEM, FESEM, AES, and XPS were used to study the effects of Ti-capping layers on the thermal stability of NiSi thin films. The Ti-capped NiSi was stable up to 700 ? C for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after 600 ? C . These results were due to that the Ni in-diffusion and Si out-diffusion were retarded by the capping layer, resulting in the suppression of the formation of NiSi 2 and Si grains at the surface.
Keywords:Ti-capped NiSi;thermal stability;interface roughness;Ni diffusio
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