화학공학소재연구정보센터
Korean Journal of Materials Research, Vol.13, No.5, 333-337, May, 2003
열 화학 기상 증착법을 이용한 탄소 나노 튜브 전계 방출 소자의 제조
Fabrication of Field Emission Device Using Carbon Nanotubes Synthesized by Thermal Chemical Vapor Deposition
E-mail:
We report a new fabrication process for carbon nanotube field emitters with high performance. The key of the fabrication process is trim-and-leveling the carbon nanotubes grown in trench structures by employing a planarization process, which leads to a uniform distance from the carbon nanotube tip to the electrode. In order to enable this processing, spin-on-glass liquid is applied over the CNTs grown in trench to have them stubborn adhesion among themselves as well as to the substrate. Thus fabricated emitters reveal an extremely stable emission and aging characteristics with a large current density of 40 ㎃/ cm 2 at 4.5 V/ μm . The field enhancement factor calculated from the F-N plot is 1.83 {\times}10 5 cm ?1 , which is a very high value and indicates a superior quality of the emitter originating from the nature of open-tip and high stability of the carbon nanotubes obtained new process.
  1. Deheer WA, Chatelain A, Ugarte D, Science, 270(5239), 1179 (1995)
  2. Iijima S, Nature, 354, 56 (1991)
  3. Chung DS, Park SH, Jin YW, IEEE., 179 (2001)
  4. Zhu W, Bower C, Zhou O, Kochanski G, Jin S, Appl. Phys. Lett., 75, 873 (1999)
  5. Jin YW, Jung JE, Park YJ, Choi JH, Jung DS, Lee HW, Park SH, Lee NS, Kim JM, Ko TY, Lee SJ, Hwang SY, You JH, Yoo JB, Park CY, J. Appl. Phys., 92, 1065 (2002)
  6. Ito F, Tomihari Y, Okada Y, Konuma K, Okamoto A, IEEE., 22, 426 (2001)
  7. Nakayama Y, Akita S, Synthetic Metals, 117, 207 (2001)
  8. Kim JM, Choi WB, Lee NS, Jung JE, Diam. Relat. Mat., 9, 1184 (1999)
  9. Choi WB, Chung DS, Kang JH, Kim HY, Jin YW, Han IT, Lee YH, Park GS, Kim JM, Appl. Phys. Lett., 75, 312 (1999)
  10. Yumura M, Ohshima S, Uchida K, Tasaka Y, Kuriki Y, Ikazaki F, Saito Y, Uemura S, Diam. Relat. Mat., 8, 785 (1999)
  11. Lee YH, Jang YT, Kim DH, Ahn JH, Ju BK, Adv. Mater., 7, 479 (2001)
  12. Bower C, Shalom D, Zhu W, Lopez D, Kochanski G, Gammel P, Jin SH, IEEE., 49, 1478 (2002)
  13. Choi GS, Cho YS, Hong SY, Park JB, Son KH, Kim DJ, J. Appl. Phys., 91, 3847 (2002)
  14. Choi KS, Cho YS, Hong SY, Park JB, Kim DJ, J. European Ceramics Society, 21, 2095 (2001)
  15. Bonard JM, Kind H, Stockli T, Nilsson LA, Solid-State Electron., 45(6), 893 (2001)
  16. Han IT, Kim HJ, Park YJ, Lee NS, Jang JE, Kim JW, Kim JM, Appl. Phys. Lett., 81, 2070 (2002)
  17. Kokkorakis GC, Modinos A, Xanthakis JP, J. Appl. Phys., 91, 4580 (2002)