PECVD로 제조된 비정질 질화탄소 박막의 특성에 미치는 증착변수의 영향

문형모; 김상섭; Hyung Mo Moon; Sang Sub Kim

Korean Journal of Materials Research, Vol.13, No.3, 150-154, March, 2003

DOI0.3740/MRSK.2003.13.3.150 Export Citation

PECVD로 제조된 비정질 질화탄소 박막의 특성에 미치는 증착변수의 영향

Effects of Deposition Conditions on the Properties of Amorphous Carbon Nitride Thin Films by PECVD

문형모, 김상섭^{1, †}

순천대학교 재료금속공학과
¹전남대학교 신소재공학부 광ㆍ전자박막연구실

Hyung Mo Moon, and Sang Sub Kim^{1, †}

Dept. of Materials Science and Metallurgical Engineering, Sunchon National University, Korea
¹Photonic and Electronic Thin Film Laboratory, Dept. of Materials Science and Engineering, Chonnam National University, Korea

E-mail:

Amorphous carbon nitride films were deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition technique (PECVD) using CH 4 and N 2 as reaction gases. The growth and film properties were investigated while the gas ratio and the working pressure were changed systematically. At 1 Torr working pressure, an increase in the N 2 partial pressure results in a significant increase of the deposition rate as well as an apparent presence of C ≡N bonding, while little affecting the microstructure and amorphus nature of the films. In the case of changing the working pressure at a fixed N 2 partial pressure of 98%, a film grown at a medium pressure of 1 {\times}10 ?2 Torr shows the most prominent C=N bonding nature and photoluminescent property.

Keywords:carbon nitride film;PECVD;amorphous film;film property

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