복합 티타늄실리사이드 공정에서 발생한 공극 생성 연구

정성희; 송오성; Seong Hwee Cheong; Oh Sung Song

Korean Journal of Materials Research, Vol.12, No.11, 883-888, November, 2002

DOI10.3740/MRSK.2002.12.11.883 Export Citation

복합 티타늄실리사이드 공정에서 발생한 공극 생성 연구

Void Defects in Composite Titanium Disilicide Process

정성희^†, 송오성

서울시립대학교 신소재공학과

Seong Hwee Cheong^†, and Oh Sung Song

Department of Materials Science and Engineering, The University of Seoul, Korea

E-mail:

We investigated the void formation in composite-titanium silicide( TiSi 2 ) process. We varied the process conditions of polycrystalline/amorphous silicon substrate, composite TiSi 2 deposition temperature, and silicidation annealing temperature. We report that the main reason for void formation is the mass transport flux discrepancy of amorphous silicon substrate and titanium in composite layer. Sheet resistance in composite TiSi 2 without patterns is mainly affected by silicidation rapid thermal annealing (RTA) temperature. In addition, sheet resistance does not depend on the void defect density. Sheet resistance with sub-0.5 μm patterns increase abnormally above 850 ? C due to agglomeration. Our results imply that sub?750 ? C annealing is appropriate for sub 0.5 μm composite X sub?750 2 process.

Keywords:composite-titanium silicide;amorphous;polycrystalline;sheet resistance;voids

[References]

Byun JS, Kim DH, Kim WS, Kim HJ, J. Appl. Phys.,, 78(3), 1725 (1995)
Tung RT, Appl. Surf. Sci., 117-118, 268 (1997)
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Akasaka Y, Miyano K, Nakajima K, Takahasi M, Tanaka S, Suguro K, Jpn. J. Appl. Phys., 38(4B), 2385 (1999)
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Kim HS, Ko DH, Base DL, Fujihara K, Kang HK, IEEE Electron Device Letters, 20(2), 86 (1999)
Lasky J, Nakos JS, Cain OJ, Geiss PJ, IEEE Trans. Electron Device, 38, 262 (1991)
Raaijmakers I, Kim KB, J. Appl. Phys., 67(10), 6255 (1990)
Ong DG, Modern MOS Technology:Process, Devices, and Design, McGraw-Hill, New York (1984) (1984)
Holloway K, Sinclair R, J. Appl. Phys., 61(4), 1359 (1987)
Nolan TP, Sinclair R, Beyers R, J. Appl. Phys., 7, 720 (1992)
Nygren S, Ostling M, Peterson SD, Norstrom H, Ryden KH, Bushta R, Chatfield C, Thin Solid Films, 168, 325 (1989)

[Referenced By]

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[1] Byun JS, Kim DH, Kim WS, Kim HJ, J. Appl. Phys.,, 78(3), 1725 (1995)

[2] Tung RT, Appl. Surf. Sci., 117-118, 268 (1997)

[3] Zhang H, Poole J, Eller R, Keefe M, J. Vac. Sci. Technol. A, 17(4), 1904 (1999)

[4] Akasaka Y, Miyano K, Nakajima K, Takahasi M, Tanaka S, Suguro K, Jpn. J. Appl. Phys., 38(4B), 2385 (1999)

[5] Sekiguchi M, Yamanaka M, Fuji T, Fukumato M, Mayumi S, J. Electrochem. Soc., 144(1) (1997)

[6] Lutze J, Scott G, Manley M, IEEE Electron Device Letters., 21(4), 155 (2000)

[7] Fang H, Ozturk MC, Seebauer EG, Batchelor DE, J. Electrochem. Soc., 146(11), 4240 (1999)

[8] Gambino JP, Colgan EG, Domenicucci AG, Cunningham B, J. Electrochem. Soc., 145(4) (1998)

[9] Kang CY, Kang DG, Lee JW, J. Appl. Phys., 86, 5293 (1999)

[10] Kim HS, Ko DH, Base DL, Fujihara K, Kang HK, IEEE Electron Device Letters, 20(2), 86 (1999)

[11] Lasky J, Nakos JS, Cain OJ, Geiss PJ, IEEE Trans. Electron Device, 38, 262 (1991)

[12] Raaijmakers I, Kim KB, J. Appl. Phys., 67(10), 6255 (1990)

[13] Ong DG, Modern MOS Technology:Process, Devices, and Design, McGraw-Hill, New York (1984) (1984)

[14] Holloway K, Sinclair R, J. Appl. Phys., 61(4), 1359 (1987)

[15] Nolan TP, Sinclair R, Beyers R, J. Appl. Phys., 7, 720 (1992)

[16] Nygren S, Ostling M, Peterson SD, Norstrom H, Ryden KH, Bushta R, Chatfield C, Thin Solid Films, 168, 325 (1989)