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Korean Journal of Materials Research, Vol.12, No.6, 508-512, June, 2002
사점굽힘시험법을 이용한 이종절연막 (Si/SiO 2 ||Si 3 N 4 /Si) SOI 기판쌍의 접합강도 연구
Direct Bonded (Si/SiO 2 ∥Si 3 N 4 /Si) SIO Wafer Pairs with Four-point Bending
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2000/AA?SiO 2 /Si(100) and 560AA/Si 3 N 4 /Si(100) wafers, which are 10 cm in diameter, were directly bonded using a rapid thermal annealing method. We fixed the anneal time of 30 second and varied the anneal temperatures from 600 to 1200 ? C . The bond strength of bonded wafer pairs at given anneal temperature were evaluated by a razor blade crack opening method and a four-point bonding method, respectively. The results clearly slow that the four-point bending method is more suitable for evaluating the small bond strength of 80~430 mJ/ /m 2 compared to the razor blade crack opening method, which shows no anneal temperature dependence in small bond strength.
Keywords:direct bonding;(Si/SiO 2 ∥Si 3 N 4 /Si) wafer pains;rapid thermal annealing;four-point bonding method;razor blade crack opening method
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