MOCVD 성장조건이 InN/GaN 다층박막의 발광세기에 미치는 영향

김현수; 이정주; 정순영; 이정용; J.Y. Lin; H.X. Jiang; H.S. Kim; J.J. Lee; S.Y. Jeong; J.Y. Lee; J.Y. Lin; H.X. Jiang

Korean Journal of Materials Research, Vol.12, No.3, 190-194, March, 2002

DOI10.3740/MRSK.2002.12.3.190 Export Citation

MOCVD 성장조건이 InN/GaN 다층박막의 발광세기에 미치는 영향

The Effect of MOCVD Growth Parameters on the Photolumenescence Intensity of InN/GaN Multi-layers

김현수^†, 이정주, 정순영, 이정용¹, J.Y. Lin², H.X. Jiang²

경상대학교 자연과학대학 물리학과
¹한국과학기술원 전자재료공학과
²칸사스 주립 대학교

H.S. Kim^†, J.J. Lee, S.Y. Jeong, J.Y. Lee¹, J.Y. Lin², and H.X. Jiang²

Department of Physics, Gyeongsang National University, Korea
¹Department of Electronic Materials Engineering, KAIST, Korea
²Department of Physics, Kansas State University, Korea

E-mail:

InN/GaN multi-layers were grown by metalorganic chemical vapor deposition(MOCVD) in order to get the appropriate structure for an high power blue-green light emitting diode(LED), and effects of growth conditions (growth temperature, pressure, and trimethylindium(TMIn)?NH 3 ?N 2 flowrare) on the integrated photoluminescence (PL) intensity and PL peak energy in InN/GaN multi-layers were investigated. The optimized growth conditions with the highest integrated PL intensity for InN/GaN multi-layers were obtained: the growth temperature at 780 ? C , the growth pressure at 325 Torr, the TMIn flow rate with 150 mℓ /min, the NH 3 flow rate with 3.2 ι/min, and N 2 flow rate with 2 ι/min.

Keywords:III-nitride semiconductors;MOCVD;Photoluminescence;multi-layers

[References]

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Lester SD, Ponce FA, Crawford MG, Steigerwald DA, Appl. Phys. Lett., 66, 1249 (1995)
Nakamura S, Senoh M, Nagahama SI, Iwasa N, Yamada J, Matsushita T, Kiyoku H, Sugimoto Y, Appl. Phys. Lett., 68, 2105 (1996)
Alotas O, Kim W, Fan Z, Bothkarev A, Sulvador A, Mohammad SN, Sverdlov B, Morkoc H, Electron. Lett., 31, 1389 (1995)
Nakamura S, Science, 281, 956 (1998)
Lo I, Hsieh KY, Hwang SL, Tu KW, Mitchel C, Saxler AW, Appl. Phys. Lett., 74, 2167 (1999)
Ambacher O, J. Phys. D: Appl. Phys., 31, 2653 (1998)
Ho I, Stringfellow GB, Appl. Phys. Lett., 69, 2701 (1996)
McCluskey MD, Romano LT, Krusor BS, Bour DP, Johnson NM, Brennan S, Appl. Phys. Lett., 72, 1730 (1998)
El-Masry NA, Piner EL, Liu SX, Bedair SM, Appl. Phys. Lett., 72, 40 (1998)
Takeuchi T, Sato S, Katsuragawa M, Komori M, Takeuchi H, Amano H, Akasaki I, Jpn. J. Appl. Phys., 36, L382 (1997)
Chichibu SF, Abare AC, Minsky MS, Keller S, Fleischer SB, Bowers JE, Hu E, Mishra UK, Coldren LA, DenBaars SP, Sota T, Appl. Phys. Lett., 73, 2006 (1998)
Wang T, Nakagawa D, Wang J, Sugahara T, Sakai S, Appl. Phys. Lett., 73, 3571 (1998)
Narukawa Y, Kawakami Y, Fujita S, Nakamura S, Phys. Rev. B, 55, R1938 (1997)
Smith M, Chen GD, Lin JY, Jiang HX, Khan MA, Chen Q, Appl. Phys. Lett., 69, 2837 (1996)
Martin RW, Middleton PG, O'Donnell KP, Van der Stricht W, Appl. Phys. Lett., 74, 263 (1999)
O'Donnell KP, Martin RW, Middleton PG, Phys. Rev. Lett., 82, 237 (1999)
Chichibu S, Sota T, Wada K, Nakamura S, J. Vac. Sci. Technol. B, 16(4), 2204 (1998)
Yang HC, Kuo PF, Lin TY, Chen YF, Chen KH, Chen LC, Chyi JI, Appl. Phys. Lett., 76, 3712 (2000)
Chuo CC, Lee CM, Nee TE, Chyi JI, Appl. Phys. Lett., 76, 3902 (2000)
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Saito T, Arakawa Y, Phys. Rev. B, 60, 1701 (1999)
Tchounkeu M, Briot O, Gil B, Alexis J, Anlombard R, J. Appl. Phys., 80, 5352 (1996)
Scholz F, Harle V, Steuber F, Boley H, Dornen A, Kaufmann B, Syganow V, Hangleiter A, J. Cryst. Growth, 170, 321 (1997)

[1] Morkoc H, Strite S, Gao GB, Lin ME, Sverdlov B, J. Appl. Phys., 76, 1363 (1994)

[2] Lester SD, Ponce FA, Crawford MG, Steigerwald DA, Appl. Phys. Lett., 66, 1249 (1995)

[3] Nakamura S, Senoh M, Nagahama SI, Iwasa N, Yamada J, Matsushita T, Kiyoku H, Sugimoto Y, Appl. Phys. Lett., 68, 2105 (1996)

[4] Alotas O, Kim W, Fan Z, Bothkarev A, Sulvador A, Mohammad SN, Sverdlov B, Morkoc H, Electron. Lett., 31, 1389 (1995)

[5] Nakamura S, Science, 281, 956 (1998)

[6] Lo I, Hsieh KY, Hwang SL, Tu KW, Mitchel C, Saxler AW, Appl. Phys. Lett., 74, 2167 (1999)

[7] Ambacher O, J. Phys. D: Appl. Phys., 31, 2653 (1998)

[8] Ho I, Stringfellow GB, Appl. Phys. Lett., 69, 2701 (1996)

[9] McCluskey MD, Romano LT, Krusor BS, Bour DP, Johnson NM, Brennan S, Appl. Phys. Lett., 72, 1730 (1998)

[10] El-Masry NA, Piner EL, Liu SX, Bedair SM, Appl. Phys. Lett., 72, 40 (1998)

[11] Takeuchi T, Sato S, Katsuragawa M, Komori M, Takeuchi H, Amano H, Akasaki I, Jpn. J. Appl. Phys., 36, L382 (1997)

[12] Chichibu SF, Abare AC, Minsky MS, Keller S, Fleischer SB, Bowers JE, Hu E, Mishra UK, Coldren LA, DenBaars SP, Sota T, Appl. Phys. Lett., 73, 2006 (1998)

[13] Wang T, Nakagawa D, Wang J, Sugahara T, Sakai S, Appl. Phys. Lett., 73, 3571 (1998)

[14] Narukawa Y, Kawakami Y, Fujita S, Nakamura S, Phys. Rev. B, 55, R1938 (1997)

[15] Smith M, Chen GD, Lin JY, Jiang HX, Khan MA, Chen Q, Appl. Phys. Lett., 69, 2837 (1996)

[16] Martin RW, Middleton PG, O'Donnell KP, Van der Stricht W, Appl. Phys. Lett., 74, 263 (1999)

[17] O'Donnell KP, Martin RW, Middleton PG, Phys. Rev. Lett., 82, 237 (1999)

[18] Chichibu S, Sota T, Wada K, Nakamura S, J. Vac. Sci. Technol. B, 16(4), 2204 (1998)

[19] Yang HC, Kuo PF, Lin TY, Chen YF, Chen KH, Chen LC, Chyi JI, Appl. Phys. Lett., 76, 3712 (2000)

[20] Chuo CC, Lee CM, Nee TE, Chyi JI, Appl. Phys. Lett., 76, 3902 (2000)

[21] Popovici G, Morkoc H, Mohammad N, in Group III Nitride Semiconductor Compounds. ed. Gil B (Oxford University Press, New York, USA, 1998) p. 21 (1998)

[22] Kim KS, Hong CH, Lee WH, Kim CH, Cha OH, Yang GM, Suh EK, Lim KY, Lee HJ, Cho HK, Lee JY, Seo JM, MRS Intrnet J. Nitride Semicond. Res. 5S1, W11, 74 (2000)

[23] Koukitu A, Takahashi N, Taki T, Seki H, J. Cryst. Growth, 170, 206 (1997)

[24] Saito T, Arakawa Y, Phys. Rev. B, 60, 1701 (1999)

[25] Tchounkeu M, Briot O, Gil B, Alexis J, Anlombard R, J. Appl. Phys., 80, 5352 (1996)

[26] Scholz F, Harle V, Steuber F, Boley H, Dornen A, Kaufmann B, Syganow V, Hangleiter A, J. Cryst. Growth, 170, 321 (1997)