저온 분자선에피탁시 방법으로 성장시킨 GaMnAs의 planar Hall 효과

김경현; 박종훈; 김병두; 김도진; 김효진; 임영언; 김창수; K.H. Kim; J.H. Park; B.D. Kim; D.J. Kim; H.J. Kim; Y.E. Ihm; C.S. Kim

Korean Journal of Materials Research, Vol.12, No.3, 195-199, March, 2002

DOI10.3740/MRSK.2002.12.3.195 Export Citation

저온 분자선에피탁시 방법으로 성장시킨 GaMnAs의 planar Hall 효과

Planar Hall Effect of GaMnAs Grown via low Temperature Molecular Beam Epitaxy

김경현^†, 박종훈, 김병두, 김도진 , 김효진 , 임영언, 김창수¹

충남대학교 재료공학과
¹한국표준연구원 재료 물성 평가 센타

K.H. Kim^†, J.H. Park, B.D. Kim, D.J. Kim , H.J. Kim , Y.E. Ihm, and C.S. Kim¹

Dept. of Materials Engineering, Chungnam National University, Daejeon 305-764, Korea
¹Materials Evaluation Center, Korea Research Institute of Standards and Science, Daejon, 305-606, Korea

E-mail:

Planar Hall effect of ferromagnetic GaMnAs thin films was investigated for the first time. The films were grown in an optimized growth condition via molecular beam epitaxy at low temperatures. For the optimization of the growth conditions, we used reflection high-energy electron diffraction, electrical conductivity, double crystal x-ray diffraction, and superconducting quantum interference device measurements techniques. We observed that the difference between the longitudinal resistance and the transverse resistance matches the planar Hall resistance. The ratio of the planar Hall resistance at saturation magnetic field to that at zero reached above 500%.

Keywords:GaMnAs;planar Hall effect;molecular beam epitaxy

[References]

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Shen A, Horikoshi Y, Ohno H, Guo SP, Appl. Phys. Lett., 71, 1540 (1997)
Kim KH, Park JH, Kim BD, Kim CS, Kim DJ, Kim HJ, Ihm YE, Met. Mater. (2001)
Liu X, Sasaki Y, Furdyna JK, Appl. Phys. Lett., 79, 2414 (2001)
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Ohno H, Science, 281, 951 (1998)
Shen A, Matsukura F, Guo SP, Sugawara Y, Ohno H, Tani M, Abe H, Liu HC, J. Crystal Growth, 201-202, 679 (1999)
Zhao B, Yan X, Pakhomov AB, J. Appl. Phys., 81, 5527 (1997)
Chang CR, IEEE Trans. Magn., 36, 1214 (2000)
Nguyen Van Dau F, Schuhl A, Childress JR, Sussiau M, Sens. Actuators A, 53, 256 (1996)
Reed ML, Liu SX, Roberts JC, Stadelmaier HH, Bedair SM, El-Masry NA, J. Mag. Mag. Mater., 218, 177 (2000)

[Related Articles]

[1] Oestreich M, Nature, 402, 735 (1999)

[2] Shen A, Horikoshi Y, Ohno H, Guo SP, Appl. Phys. Lett., 71, 1540 (1997)

[3] Kim KH, Park JH, Kim BD, Kim CS, Kim DJ, Kim HJ, Ihm YE, Met. Mater. (2001)

[4] Liu X, Sasaki Y, Furdyna JK, Appl. Phys. Lett., 79, 2414 (2001)

[5] Overberg ME, Abernathy CR, Pearton SJ, Appl. Phys. Lett., 79, 1312 (2001)

[6] Schuhl A, Nguyen van Dau F, Childress JR, Appl. Phys. Lett., 66, 2751 (1995)

[7] Van Esch A, Van Bockstal L, De Boeck J, Verbanck G, Van Steenbergen AS, Wellmann PJ, Grietens B, Bogaerts R, Herlach F, Borghs G, Phys. Rev. B, 56, 13103 (1997)

[8] Ohno H, Science, 281, 951 (1998)

[9] Shen A, Matsukura F, Guo SP, Sugawara Y, Ohno H, Tani M, Abe H, Liu HC, J. Crystal Growth, 201-202, 679 (1999)

[10] Zhao B, Yan X, Pakhomov AB, J. Appl. Phys., 81, 5527 (1997)

[11] Chang CR, IEEE Trans. Magn., 36, 1214 (2000)

[12] Nguyen Van Dau F, Schuhl A, Childress JR, Sussiau M, Sens. Actuators A, 53, 256 (1996)

[13] Reed ML, Liu SX, Roberts JC, Stadelmaier HH, Bedair SM, El-Masry NA, J. Mag. Mag. Mater., 218, 177 (2000)