Template-guided solution-shearing (TGSS) is used to fabricate field-effect transistors (FETs) composed of micropatterned prisms as active channels. The prisms comprise highly crystalline PTDPP-DTTE, in which diketopyrrolopyrrole (DPP) is flanked by thiophene. The FET has a maximum mobility of approximately 7.43 cm(2) V-1 s(-1), which is much higher than the mobility values of the thin-film transistors with solution-sheared or spin-coated films of PTDPP-DTTE annealed at 200 degrees C.