Anisotropic magnetoresistance at the BiFeO3 domain walls has been observed thanks to the realization of micro-devices that allow the direct magneto-transport characterization of the domain-walls. Anisotropic magnetoresistance of ferromagnetic metals has been a pillar in spintronic technology, and now it is evidenced at the conductive domain walls of an insulating ferroelectric material, which implies that domain walls become an electrically tunable nanospintronic object.